| Allicdata Part #: | IXA55I1200HJ-ND |
| Manufacturer Part#: |
IXA55I1200HJ |
| Price: | $ 8.58 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT 1200V 84A 290W TO247 |
| More Detail: | IGBT PT 1200V 84A 290W Through Hole ISOPLUS247™ |
| DataSheet: | IXA55I1200HJ Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 30 +: | $ 7.79541 |
| Power - Max: | 290W |
| Supplier Device Package: | ISOPLUS247™ |
| Package / Case: | ISOPLUS247™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Test Condition: | 600V, 50A, 15 Ohm, 15V |
| Td (on/off) @ 25°C: | -- |
| Gate Charge: | 190nC |
| Input Type: | Standard |
| Switching Energy: | 4.5mJ (on), 5.5mJ (off) |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
| Current - Collector (Ic) (Max): | 84A |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| IGBT Type: | PT |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
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The IXA55I1200HJ is a high power bipolar transistor used in a variety of applications. It belongs to the Transistors - IGBTs - Single category, and its operating principle is based on the use of a high current transistor as a switch.
The IXA55I1200HJ is rated for 1200V, and its total power dissipated when a current of 25A is applied is 55A. This makes it perfectly suited for high-current applications, such as welding, high-voltage power supplies, motor drives and more.
The IXA55I1200HJ has a breakdown voltage of 800V and a maximum safe operating area (SOA) of 40A at 600V. This gives it high levels of reliability, making it suitable for use in a variety of applications.
The IXA55I1200HJ\'s primary application is for switching large amounts of power, such as in welding. It can also be used for driving motors, as a security switch, or other high-current applications that require switching large amounts of power.
The IXA55I1200HJ\'s working principle is based on the use of a high current transistor as a switch. This transistor is connected in series with the device, so that when a current is applied to the base, it switches on the collector, activating the device. When the current is removed, the transistor switches off, deactivating the device.
One of the main advantages of the IXA55I1200HJ is its ability to operate at a high frequency, up to 50MHz. This makes it suitable for applications which require high frequency switching. Another advantage is its low drive power requirement, making it suitable for use in situations where low power is needed.
The IXA55I1200HJ is designed and manufactured using the latest technology, making it reliable and robust. It is also designed for long-term reliability, meaning it can be used for years without problems. The IXA55I1200HJ is also designed to withstand harsh environments, and can be used in extreme temperatures and difficult conditions.
In conclusion, the IXA55I1200HJ is a robust and reliable transistor that is perfectly suited to high current applications. Its high power rating and maximum safe operating area make it suitable for a variety of applications, including welding, motor drives, and security switches. Its high frequency capability and low drive power requirement make it suitable for a variety of situations, while its long-term reliability ensures it can be used for years without any problems.
The specific data is subject to PDF, and the above content is for reference
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IXA55I1200HJ Datasheet/PDF