
Allicdata Part #: | IXA70I1200NA-ND |
Manufacturer Part#: |
IXA70I1200NA |
Price: | $ 15.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 100A SOT-227B |
More Detail: | IGBT Module PT Single 1200V 100A 350W Chassis, Stu... |
DataSheet: | ![]() |
Quantity: | 1000 |
10 +: | $ 13.64520 |
Series: | -- |
Part Status: | Active |
IGBT Type: | PT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 350W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
Current - Collector Cutoff (Max): | 100µA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
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IXA70I1200NA Application Field and Working Principle
The IXA70I1200NA is an isolated base IGBT module from IXYS. It is classified as a Transistors - IGBTs - Modules. IGBT stands for insulated-gate bipolar transistor and it is a combination of both bipolar junction transistor (BJT) and Field Effect Transistor (FET). The IXA70I1200NA is primarily used in the industrial markets where it can be used for motor control applications such as AV speed, elevation and other servo drives.
The main feature of IXA70I1200NA is that it has a very high voltage withstanding capability of 1200V making it suitable for higher voltage applications. It also has a low on-state voltage loss, low gate charge and a wide temperature range of -40 to +125 °C making it highly reliable in different industrial environment and applications. The package of IXA70I1200NA is provided in two forms: Plug-in or top-hug and bolt-in surface mount.
The IXA70I1200NA module contains two IGBTs and one freewheeling diode in a single package and is considered ideal for various high power switching applications. Its typical applications include motor control, variable speed drives and power switching applications. It comes with an isolated base design and integrated freewheeling diode for low switching losses, in addition to thermal and electrical isolation of IGBTs.
The working principle behind the IXA70I1200NA module is based on two main components; the IGBTs and the diodes. IGBT is basically a bi-directional transistor which is controlled with the gate voltage. As the gate voltage increases, the IGBT switches from OFF mode to ON mode and does not require the gate voltage to switch back. The diode part of the module provides protection to the IGBT and ensures a speedier recovery from a short circuit. The device can also be used as an inverter to switch between half and full bridge circuits, providing higher levels of motor control.
The IXA70I1200NA module is a perfect solution for high voltage, high power switching applications and it has been widely used in the industrial markets. It is also suitable for AC drives, low and mid-range inverter applications, traction drives, induction heating, UPS and solar applications. This module helps in optimizing the system power consumption and provides high efficiency and stability in these applications. It is a reliable solution in the industrial environment and is designed to operate reliably in a wide range of temperatures.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IXA70I1200NA | IXYS | 15.02 $ | 1000 | IGBT 1200V 100A SOT-227BI... |
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