IXBN42N170A

Current - Collector Cutoff (Max):	50µA
Base Part Number:	IXB*42N170
Supplier Device Package:	SOT-227B
Package / Case:	SOT-227-4, miniBLOC
Mounting Type:	Chassis Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
NTC Thermistor:	No
Input:	Standard
Input Capacitance (Cies) @ Vce:	3.5nF @ 25V
Series:	BIMOSFET™
Vce(on) (Max) @ Vge, Ic:	6V @ 15V, 21A
Power - Max:	312W
Current - Collector (Ic) (Max):	42A
Voltage - Collector Emitter Breakdown (Max):	1700V
Configuration:	Single
IGBT Type:	--
Part Status:	Active

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IXBN42N170A Application Field and Working PrincipleThe IXBN42N170A IGBT module is one of many solutions available to today’s electrical engineers. Utilizing Ion-implanted Gate-body Trench technology in a low-cost, high-power package, the IXBN42N170A is capable of a record-breaking 10,000A current rating with a maximum junction temperature of 175°C. This module is also exceptionally reliable due to its integrated fault protection circuitry, making it a suitable choice for many applications where high temperatures and fault tolerance must be highly considered.The IXBN42N170A is most often used where space has traditionally been an issue, such as in small electric motors, appliances, UPS systems, and other applications that require small but powerful solutions. With the addition of this module, many of those applications can now be implemented with a more reliable and cost-effective solution. This module\'s integrated protection circuitry makes it especially trustworthy in situations where temperatures are expected to exceed normal operating limits or in applications prone to unexpected faults.The IXBN42N170A IGBT module works by combining an Insulated Gate Bipolar Transistor (IGBT) with a Diode in a single package. This makes it function similarly to an SCR, but with an IGBT and Diode structure, it is able to provide superior characteristics compared to an SCR or a regular MOSFET.The IGBT in the IXBN42N170A module is built using Insulated Gate-Body Trench technology. Essentially, this means that the entire IGBT and its semiconductor layers have been built in a compact form while still offering superior thermal performance. The Diode in the IXBN42N170A is a fast-switching, ultra-fast reverse recovery diode, which provides a secure path for currents which need to be quickly diverted or synced in a circuit. The IXBN42N170A module is equipped with a built-in safe-operating area (SOA) fault protection circuitry, which protects the module from over-voltage and over-current conditions, making it ideal for use in many applications where space and temperature are a concern. This module also features an integrated Wheatstone bridge, which creates a pulse-width modulation (PWM) signal which can be used to control circuits with precision. Overall, the IXBN42N170A IGBT module is an exceptionally high-power, low-cost solution for high-temperature applications. With its integrated fault protection circuitry and Diode structure, it is an ideal choice for engineers who need reliable and highly efficient solutions. With its current rating of 10,000A, it is suitable for applications such as motor drives, inductive heating, welding, and many other applications where high current levels are needed.

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