IXBR42N170

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The IXBR42N170 is a high voltage and high current, low on resistance (R_on) MOSFET optimized for DC-AC motor and solenoid applications. It is a single IGBT (Isolated Gate Bipolar Transistor) distributed by IXYS Corporation. It has a collector-emitter breakdown voltage of 1700V, low gate-emitter capacitance, and low on-state voltage. It has a rated current of 42A, a gate-emitter voltage of 15V, and a maximum junction temperature of 150°C.It has several advantages over other transistors, including low on-state resistance, high speed switching, good thermal control capabilities, and wide voltage ranges. It also has less harmonics and lower power dissipation. This makes it suitable for various applications, such as motor control, solenoid control, UPS, and PV inverters.In terms of its working principle, the IXBR42N170 is an IGBT, which combines the advantages of both MOSFET and bipolar transistors. It utilizes an isolated gate of opposite polarity and separate collector and emitter regions, allowing it to switch faster and provide higher breakdown voltage.In operation, the control signal is applied to the gate. In the on-state, the transistor is acting as a switch, allowing current to flow through the collector-emitter region. Gate current is needed to sustain the voltage at the gate-emitter region. This current is referred to as the gate drive. The transistor switches off, when the gate voltage is decreased below a certain level. When the transistor is off, the voltage at the gate-emitter region is equal to the voltage at the gate electrode.In addition, IXBR42N170 provides a built-in protection, allowing it to rapidly shut off the current flow in case of unexpected variations in the collector-emitter voltage. This ensures not only efficient operation but also safety.In comparison to voltage-controlled IGBTs, IXBR42N170 has lower switching losses, enabling it to operate under higher power conditions. As a result, it is more suitable for driving heavy loads.Overall, IXBR42N170 is a high voltage, single IGBT. It combines the advantages of both MOSFET and bipolar transistor and provides a built-in protection feature. Its low on-state resistance, fast switching action, and wide voltage range make it an ideal choice for various applications, such as motor and solenoid control, UPS, and PV inverters.

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