IXDA20N120AS-TUB Allicdata Electronics
Allicdata Part #:

IXDA20N120AS-TUB-ND

Manufacturer Part#:

IXDA20N120AS-TUB

Price: $ 3.93
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT
More Detail: IGBT
DataSheet: IXDA20N120AS-TUB datasheetIXDA20N120AS-TUB Datasheet/PDF
Quantity: 1000
50 +: $ 3.56643
Stock 1000Can Ship Immediately
$ 3.93
Specifications
Series: --
Part Status: Active
IGBT Type: --
Vce(on) (Max) @ Vge, Ic: --
Switching Energy: --
Input Type: --
Td (on/off) @ 25°C: --
Test Condition: --
Operating Temperature: --
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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The IXDA20N120AS-TUB is a common type of IGBT transistor. It is a single, three-terminal field-effect transistors, which is specifically designed for series inverse parallel (SIP) applications. It is a high voltage four-pack insulated gate bipolar transistors with an integrated freewheeling diode. This transistor is also characterized by extremely low switching losses and high surge current capability.

IXDA20N120AS-TUB Application Field

The IXDA20N120AS-TUB is a robust and reliable source of power for those applications that require switching of a large load current. This IGBT transistor is widely used in the power switching of appliances such as coffeemakers, microwaves, refrigerators, ranges, drills and various industrial equipment. It is also used in Uninterruptible Power Supply (UPS), switch-mode power supplies, power inverters, voltage stabilizers, and air conditioners.

Moreover, the IXDA20N120AS-TUB power train device can operate efficiently with a wide range of DC output voltages, from 30V up to 400V, which enhances its flexibility and usability for a wide range of applications.

IXDA20N120AS-TUB Working Principle

The IXDA20N120AS-TUB IGBT transistor works by using a combination of two switching techniques - bipolar and MOSFET. The inner operation of this device is derived from the junction between two separate solid-state components, the p-type and the n-type semiconductor.

The biasing of the IXDA20N120AS-TUB forms a thin layer of n-type across the surface of the p-type substrate. This layer forms a barrier to the flow of electrons between the PB and the SOURCE (substrate). Then, the Gate electrode is used to control the voltage of the n-type, to adjust the number of electrons available for conduction between the Collector and the Emitter electrodes.

By changing the voltage of the Gate, electrons can be drawn away from the Collector and the Emitter, thus opening the switch for the IXDA20N120AS-TUB. The process is reversed when the Gate voltage is decreased. This assembly helps to reduce power dissipation by making it easier for the transistor to switch.

The low-dissipation design of the IXDA20N120AS-TUB also helps to reduce conduction losses, as well as providing an efficient solution for suppressing electromagnetic interference.

Conclusion

The IXDA20N120AS-TUB is an effective power source, with capabilities perfect for a wide range of demanding applications. Its structure and characteristics make it an ideal choice for heavy load switching, and its efficiency and excellent power reduction help make it a very attractive power option.

The specific data is subject to PDF, and the above content is for reference

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