IXDP20N60B Allicdata Electronics
Allicdata Part #:

IXDP20N60B-ND

Manufacturer Part#:

IXDP20N60B

Price: $ 2.50
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 32A 140W TO220AB
More Detail: IGBT NPT 600V 32A 140W Through Hole TO-220AB
DataSheet: IXDP20N60B datasheetIXDP20N60B Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
50 +: $ 2.27720
Stock 1000Can Ship Immediately
$ 2.5
Specifications
Power - Max: 140W
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 300V, 20A, 22 Ohm, 15V
Td (on/off) @ 25°C: --
Gate Charge: 70nC
Input Type: Standard
Switching Energy: 900µJ (on), 400µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Current - Collector Pulsed (Icm): 40A
Current - Collector (Ic) (Max): 32A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: NPT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXDP20N60B Application Field and Working Principle

The IXDP20N60B is an ultra-fast power MOSFET developed by IXYS Corporation and has a wide range of application fields, from the most rugged industrial settings to the most demanding consumer and medical requirements. This IGBT transistor is specifically designed to handle high power density requirements. It can withstand a maximum blocking voltage of 20KV, a maximum repetitive peak current of 600A, and a maximum surge current of 900A.

The IXDP20N60B is classified under the IGBT (Insulated Gate Bipolar Transistor) family, and as such, its operating principle is similar to that of BJTs (Bipolar Junction Transistors). As the name implies, IGBTs are comprised of both MOSFET (Metal-Oxide Semiconductor Field-Effect Transistors) and BJT elements. In the case of the IXDP20N60B, the device features two PNP transistors, two N-channel MOSFETs and a control gate. The two MOSFETs form a voltage-controlled switch, while the PNP transistor is responsible for providing voltage isolation.

The operating principle of the IXDP20N60B is as follows. When a positive voltage is applied to the gate, the voltage is conducted by the PNP transistor, and the gate-source capacitance is charged, which in turn results in the device beginning to conduct current. The PNP transistor then switches on, creating a low saturation voltage across its collector and emitter terminals, allowing more current to flow from the source to the drain. This allows the current to be controlled by the voltage applied to the gate.

The IXDP20N60B is an excellent choice for a variety of power-switching applications, such as automotive applications, motor drives, UPS systems and AC/DC power switching. Its ultra-fast switching properties give it an edge over other conventional IGBTs, making it ideal for high-speed switching applications. The IXDP20N60B is also exceptionally robust, with stand-off voltage capability of 20KV, and can operate at junction temperatures of up to 175°C. This makes it suitable for operation in even the harshest environments.

In conclusion, the IXDP20N60B is a perfect choice for any application requiring high power density and high speed switching performance. It is exceptionally robust, reliable and durable, and can be utilised in a wide variety of energy-switching applications. As such, it is an ideal choice for both industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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