IXEL40N400 Allicdata Electronics
Allicdata Part #:

IXEL40N400-ND

Manufacturer Part#:

IXEL40N400

Price: $ 58.83
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 4000V 90A 380W ISOPLUSI5
More Detail: IGBT 4000V 90A 380W Through Hole ISOPLUSi5-Pak™
DataSheet: IXEL40N400 datasheetIXEL40N400 Datasheet/PDF
Quantity: 965
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 53.48070
10 +: $ 50.24120
25 +: $ 47.97200
Stock 965Can Ship Immediately
$ 58.83
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 4000V
Current - Collector (Ic) (Max): 90A
Current - Collector Pulsed (Icm): 400A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
Power - Max: 380W
Switching Energy: 55mJ (on), 165mJ (off)
Input Type: Standard
Gate Charge: 275nC
Td (on/off) @ 25°C: 160ns/630ns
Test Condition: 2800V, 40A, 33 Ohm, 15V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUSi5-Pak™
Supplier Device Package: ISOPLUSi5-Pak™
Description

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IXEL40N400 Application Field and Working Principle

IXEL40N400 is one of the single IGBTs in transistors that are made from the unique combination of Hexagon SiC (Silicon Carbide) and vertical conducting diamond electrodes. This three-junction and three-terminal device provides excellent performance, making it ideal for power applications. This particular type can be used in a variety of applications, including power switches, power converters, power amplifiers, power brokers, and power supplies.

The working principle of the IXEL40N400 is based on an external electric field that forces electrons through the cavity in between the two diamond electrodes and the SiC. This field is created by a breakdown voltage, which is the voltage required before current starts to flow through the device. This breakdown voltage is typically 8V, or greater depending on the device, and it is important that the breakdown voltage is properly set for any application.

When the electric field suddenly increases, current is created and then propagated across the device. This current is called the collector current, and it can be used to control a number of different types of circuits. When the external field is decreased, the current decreases, allowing for more efficient operation.

In applications where the IXEL40N400 is used as a power switch, when the collector current reaches the threshold limit, the device is turned on. This process is known as “threshold switching” and is achieved by the presence of the diamond and SiC layers. The diamond layer is able to hold the voltage very quickly, while the SiC layer stores the current until the voltage reaches the threshold limit of the device.

In applications where the IXEL40N400 is used as a power amplifier, it is capable of regulating power to the load very accurately, since it has fast switching. It is also able to amplify small signals due to its low device-level capacitance.

The IXEL40N400 is very reliable and suitable for high temperature applications, as it has a high dielectric strength and high thermal conductivity. Furthermore, it is housed in an hermetic package, which is able to protect the device from any hazardous conditions. As such, it is suitable for power applications in a variety of challenging environments.

In conclusion, the IXEL40N400 is an excellent single IGBT device that is ideal for a variety of power applications. It has the ability to quickly switch and regulate currents, making it suitable for power switches, power converters, power amplifiers, power brokers, and power supplies. Furthermore, it is housed in an hermetic package, which is able to protect the device from any hazardous conditions.

The specific data is subject to PDF, and the above content is for reference

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