IXEN60N120

Series:	--
Part Status:	Obsolete
IGBT Type:	NPT
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	100A
Power - Max:	445W
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 60A
Current - Collector Cutoff (Max):	800µA
Input Capacitance (Cies) @ Vce:	3.8nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227B

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Introduction

IXEN60N120 is a high-power intelligent Insulated Gate Bipolar Transistor (IGBT) module that serves as the centralized power control device in power circuits of various electric drives and various power devices. It is the latest product of IXYS Module System, the power device division of IXYS Corporation. The IGBT module adopts the hybrid integration technology of its proprietary HiPerFET process and IXYS corporation\'s special chip design and precision Sinter technology, which can combine big currents and small loss into a compact package.

Application Fields

IXEN60N120 is widely used in various industries thanks to its high power, dynamic performance and current control accuracy. Its potential application fields include medium-voltage high power adjustable direct-current speed regulation, electric locomotive traction, medium and large capacity electric arc furnace, alternating- current high frequency, power presses, electric vehicle propulsion and other power-driven electric systems.

Working Principle

IXEN60N120 consists of a middle gates multi-wire connection IGBT and a protective diode. The IGBT consists of a high-conductivity substrate, a collector electrode, an emitter electrode, a control electrode and a epitaxial layer. When the control electrode reaches a certain voltage and current, electrons flow between the emitter and collector electrodes and current flows accordingly.By utilising this principle, IXEN60N120 can serve as a switch in power circuit and control the voltage and current of the circuit. This allows electric devices and drives to quickly and efficiently convert electrical energy into mechanical energy and vice versa, thus achieving various motions control purposes.

Advantages

IXEN60N120 features many advantages over other IGBT modules. The power component of IXEN60N120 not only can bear big electric currents, but also has extremely low switching loss, low crossover current and low temperature influence. The module also has a wide range of switching frequency, so it can serve in a very wide range of application scenarios. It can withstand large peak transient power and can act in a continuous stable switching frequency without temperature drift. The module\'s fast cooling time also comes in handy in various cooling scenarios.The module can also feature high accuracy current control, which greatly facilitates its use in many current-driven applications. By controlling and tracking the current, it can greatly reduce the impact and electromagnetic interference of power supply circuits.

Conclusion

IXEN60N120 is a high-power intelligent IGBT module developed by IXYS Module System. Its wide range of applications makes it an ideal choice for all sorts of electric drives, power supplies and power devices. It features high power, dynamic performance and current control accuracy, making it an ideal choice for medium and high power applications. With its current control accuracy and wide range of switching frequency, the module can further facilitate various motion controls and reduce the impact and electromagnetic interference of power supply circuits.

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