IXGC12N60CD1

Switching Energy:	90µJ (off)
Base Part Number:	IXG*12N60
Supplier Device Package:	ISOPLUS220™
Package / Case:	ISOPLUS220™
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	35ns
Test Condition:	480V, 12A, 18 Ohm, 15V
Td (on/off) @ 25°C:	20ns/60ns
Gate Charge:	32nC
Input Type:	Standard
Series:	HiPerFAST™
Power - Max:	85W
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 12A
Current - Collector Pulsed (Icm):	48A
Current - Collector (Ic) (Max):	15A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The IXGC12N60CD1 is a single IGBT (Insulated Gate Bipolar Transistor) optimized for high speed switching applications. Developed to make applications in medium to high power applications, this device provides superior performance over other transistors. It has a rugged structure and utilizes advanced process technology to reduce footprint size and improve power dissipation. It also offers a wide operating temperature range to allow its use in a host of applications. Let\'s delve deeper into this device\'s application field and working principle.

Application Field

The IXGC12N60CD1 offers superior performance, making it invaluable in medium- to high-power applications. It can be used in power converters, high frequency switching, motor drives, and in renewable energy such as wind, solar and nuclear. This IGBT is suitable for applications that require high power and long lifetimes, such as in motor drives, industrial lighting, and HVAC.

Working Principle

The IXGC12N60CD1 works through the combined principles of a bipolar transistor and MOSFET (metal oxide semiconductor field-effect transistor). It is composed of three layers: two P-type layers and one N-type layer. This creates a reverse-biased insulated gate which, when the gate voltage is increased, allows electrons to move from the N-type to the P-type layers. This creates a conducting channel between the two P-type layers, allowing current to flow. The device also contains a base doping layer, which helps to reduce the turn-on time - the time it takes to move between ON and off states - by increasing the switching speed of the device.When the gate voltage is increased, the electrons move from the N-type to the P-type layers and begin to form a conducting channel between these two layers. This, in turn, causes a voltage drop across the body diode, allowing current to flow through the device. As the gate voltage increases, the current flowing through the device increases accordingly.

Conclusion

The IXGC12N60CD1 is an IGBT (Insulated Gate Bipolar Transistor) with a rugged structure and advanced process technology. It is an ideal choice for medium- to high-power applications, as it offers superior performance over standard transistors. The device works through the combined principles of a bipolar transistor and MOSFET, utilizing three layers and gate voltage to allow current to flow. This IGBT can be used in power converters, high frequency switching, and motor drives, as well as renewable energy such as wind, solar and nuclear.

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