IXGL200N60B3 Discrete Semiconductor Products

Power - Max:	400W
Base Part Number:	IXG*200N60
Supplier Device Package:	ISOPLUS264™
Package / Case:	ISOPLUS264™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	300V, 100A, 1 Ohm, 15V
Td (on/off) @ 25°C:	44ns/310ns
Gate Charge:	750nC
Input Type:	Standard
Switching Energy:	1.6mJ (on), 2.9mJ (off)
Series:	GenX3™
Vce(on) (Max) @ Vge, Ic:	1.5V @ 15V, 100A
Current - Collector Pulsed (Icm):	600A
Current - Collector (Ic) (Max):	150A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Application Field and Working Principle of IXGL200N60B3 Single IGBT

The IXGL200N60B3 single IGBT is a compact, robust, and efficient powertrain component that is used in electric vehicles. It is designed to provide high power density, high current density, and low losses. This device is ideal for applications that demand the highest efficiency and reliability. This article will explore the application fields and working principle of the IXGL200N60B3.

Application Fields

The IXGL200N60B3 is mainly used in automotive to provide high power, high current performance and outstanding efficiency. Electric and hybrid vehicles, such as buses and passenger cars, are likely to benefit from the device’s features, thanks to its superior power conversion efficiency.
The device is also used in industrial automation and robotics. These applications require reliable and efficient power delivery, which the IXGL200N60B3 provides. Additionally, in renovations and plant refits, the IXGL 200N60B3 is an ideal choice due to its excellent power density in an application with limited space.

Working Principle

The IXGL200N60B3 is an insulated-gate bipolar transistor (IGBT). It is an evolution of the MOSFET and BJT transistors, combining the high-speed switching capability and low operating voltage characteristics of the MOSFET, with the high current density and low switching loss of the BJT. This device features a fast-switching gate structure and MOSFET gate drive.
The device operation can be broken down into three stages: (1) Turn-on, (2) Conduction, and (3) Turn-off.

• At turn-on, the IGBT current-limiting resistance and gate charge circuitry bring the junction voltage up to the required voltage.
• During conduction, the gate drive maintains a low voltage on the IGBT, thereby ensuring a low on-state voltage drop, improving the device’s performance and efficiency.
• At turn-off, the device releases the current from the IGBT, allowing the device to quickly transition from on to off.

The IXGL200N60B3 has been designed to provide high efficiency and reliable operation in the most challenging of applications. Its features and wide application are why the device has become a popular choice for electric and hybrid vehicle applications, as well as industrial automation and robotics.

Conclusion

In conclusion, the IXGL200N60B3 is a single IGBT component that offers high power, high current performance and excellent efficiency. Its distinctive features, excellent switching speed and low operating voltage, make the device an ideal choice for electric and hybrid vehicles, as well as industrial automation and robotics. Additionally, its fast switching gate structure and low on-state voltage drop ensure excellent performance in applications where space is at a premium.

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