IXRR40N120

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The IXRR40N120 is a single IGBT with a nominal collector-emitter voltage of 1200 V, a maximum collector current of 40 A, and a maximum device power dissipation of 484 W. This device is suitable for applications such as home appliances, machine tools, automotive, and consumer electronics, as well as for applications in renewable energy and industrial robotics.

An Insulated Gate Bipolar Transistor (IGBT) is a three-terminal, static power electronic switch with a structure that integrates power MOSFET and BJT technologies. It is used in a wide variety of applications, including motor drive, uninterruptible power supply (UPS) systems, wind turbine control and micro-grid applications. An IGBT is a bipolar transistor with two terminals connected to a control terminal. Its structure is similar to that of a standard BJT, with a base layer, an emitter, and a collector. However, the IGBT has an insulated gate that controls current flow from the collector to the emitter and from the emitter to the collector. The insulation between the gate and the collector and emitter is created by a thin non-conductive layer. The gate is connected to the collector through an insulating layer, while the emitter is connected directly to the collector. IGBTs offer higher switching speeds, better efficiency, and low power dissipation compared to traditional bipolar transistors.

The IXRR40N120 is a single IGBT device with a wide operating temperature range of -55°C to 150°C. The device has a nominal collector-emitter voltage of 1200 V, a maximum collector current of 40 A, and a maximum device power dissipation of 484 W. The IXRR40N120 has a fast turn-on and off time enabling high speed switching, and supports up to 85 kHz of switching frequency. It also features low collector-emitter saturation voltage, low gate-emitter voltage, and low gate charge, resulting in low on-state resistance losses and conduction losses. The IXRR40N120 is available in an industry standard footprint of TO-263 (D2PAK) package.

The working principle of the IXRR40N120 is simple and straightforward. When a small current is applied to the IGBT gate, the gate voltage increases and turns on the device. As the voltage increases across the collector-emitter terminals, the collector current begins to flow. This causes the collector-emitter voltage to decrease, resulting in a lower current flow. When the gate voltage is removed or decreased, the IGBT device turns off, since the collector current flow is reduced. This allows the IGBT to switch between its on and off conditions quickly and efficiently.

The IXRR40N120 is a single IGBT device ideal for applications in home appliances, machine tools, automotive, and consumer electronics, as well as applications in renewable energy and industrial robotics. The device features low on-state resistance losses and conduction losses, making it suitable for applications requiring high-power output and fast switching speeds. Additionally, the IXRR40N120 supports up to 85 kHz of switching frequency, allowing it to be used in applications requiring high frequency power switching.

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