IXSP15N120B

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The IXSP15N120B is a state of the art IGBT module with integrated anti-parallel diode, in an insulated type package. It is ideal for power management applications, power switching, motor control, lighting and other switched mode power-supply (SMPS) applications. It has a high current carrying capacity of up to 15A, a maximum voltage of 1200V and a standard turn-on time of 100ns. Additionally, the IXSP15N120B is built with a rugged air-gap construction for increased reliability.

The IXSP15N120B is a third generation Insulated Gate Bipolar Transistor (IGBT) that combines an insulated gate control with a CMOSFET P-channel high voltage field effect power device. This device is the result of improved MOS and bipolar technology. It works by replacing the high voltage bipolar junction transistors with a single transistor power structure implemented using high voltage and low on-resistance IGBTs. This combination of components helps to reduce electrical losses, as well as providing a higher degree of operating efficiency.

The single IGBT structure of the IXSP15N120B module is significantly different from standard power transistors. Its gate control is isolated from the main power N-type and P-type layers using an electrically insulating silicon dioxide film. The gate is then sandwiched between the two layers and activated by applying a voltage. This voltage is applied by a complementary pair of gate drive transistors, allowing the IGBT to be switched on and off quickly and easily. The gate voltage being applied is dependent on the type of IGBT.

When the IGBT is in the off state, its internal circuit can be represented as the insulation of gate terminal (G), source terminal (S) and the drain terminal (D) forming the three terminals of a closed circuit. No current flows in this state since the gate terminal is isolated from the other two. When a gate voltage is applied to the terminal, the insulating gate oxide layer shrinks, allowing electrons to leave the N-type power layer and enter the P-type layer, creating an inversion layer between the two. This causes an excess of electrons in the P-type power layer, forming a transistor channel which allows an electron current from the source to drain terminal. This current flow closes the transistor, thus the IGBT is said to be ‘on’.

The P-channel and the N-channel IGBT both require the same gate voltage to be switched on, however the P-channel IGBT requires a negative voltage for the switch-off state. As the IGBT turns ‘on’, current flows between the source and drain terminals and a voltage is induced across the output. This type of IGBT is typically used in motor control and switching applications, where the high voltage capability and extremely fast switching speeds of the IGBT solutions can provide superior performance and improved efficiency. Additionally, the IXSP15N120B has anti-parallel diodes integrated into the package to provide a further degree of protection and improved power efficiency.

The IXSP15N120B can be used in applications where high current needs to be switched quickly. Its compact size makes it ideal for use in power supplies, inverters, UPS, renewable energy technologies and other equipment where space is at a premium. Additionally, the IXSP15N120B has excellent thermal stability, making it suitable for a wide range of ambient temperatures from -55°C to 150°C.

Overall, the IXSP15N120B is an ideal choice for applications requiring the extremely fast switching speeds and high voltage capability of an IGBT. It has a single transistor structure, integrated anti-parallel diodes, a maximum current rating of 15A, a maximum voltage of 1200V and a turn on time of 100ns. Additionally, it has excellent thermal stability and a rugged air-gap construction making it a reliable and efficient solution for a wide range of power management and power switching applications.

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