Allicdata Part #: | IXXP12N65B4D1-ND |
Manufacturer Part#: |
IXXP12N65B4D1 |
Price: | $ 1.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT |
More Detail: | IGBT 650V 38A 160W Through Hole TO-220 |
DataSheet: | IXXP12N65B4D1 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.53304 |
Input Type: | Standard |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 43ns |
Test Condition: | 400V, 12A, 20 Ohm, 15V |
Td (on/off) @ 25°C: | 13ns/158ns |
Gate Charge: | 34nC |
Series: | XPT™, GenX4™ |
Switching Energy: | 440µJ (on), 220µJ (off) |
Power - Max: | 160W |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 12A |
Current - Collector Pulsed (Icm): | 70A |
Current - Collector (Ic) (Max): | 38A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Part Status: | Active |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IXXP12N65B4D1 is a high-speed IGBT transistor designed for medium to high-power switching applications. This IGBT combines the best of both bipolar junction transistors and MOSFETs, offering the low gate-charge, low RDS(on) and fast switching characteristics of MOSFETs combined with the high-voltage ruggedness of BJTs. It is also suitable for motor control applications, LED lighting, and power supplies.
The IXXP12N65B4D1 is an N-channel IGBT with a maximum collector current rating of 12A and a continuous collector current rating of 10A. It has a VCE(sat) of 3.9 V at 6 A and an output capacitance of 122pF. The IXXP12N65B4D1 is equipped with a fast-recovery, active-clamp-based freewheeling diode to reduce switching losses and surge voltages. There is also an integrated soft recovery diode for more efficient operation.
The IXXP12N65B4D1 is typically used in motor control, high-power switching, power supplies and LED lighting applications. It is useful in these areas because it has low losses, low noise, and high-speed switching characteristics. The integrated soft recovery diode allows for more efficient switching, while the fast-recovery, active-clamp freewheeling diode helps reduce surge voltages and improve power efficiency.
The working principle of IXXP12N65B4D1 is based on the principle of bipolar transistor action. In the IXXP12N65B4D1, the gate and collector are connected together, forming the base of the transistor. A small current at the base causes the larger collector current to be switched on or off. In this way, the IXXP12N65B4D1 can act as a switch, turning on and off a substantial amount of current through the collector.
The IXXP12N65B4D1 is a great choice for applications where fast switching and low power losses are desired. Its high-speed switching performance and low gate charge make it an ideal choice for medium to high-power switching applications. Its integrated soft-recovery diode also provides efficient switching with minimal losses. It is also suitable for motor control, LED lighting, and power supply applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXXP50N60B3 | IXYS | 4.43 $ | 1000 | IGBTIGBT 600V 120A 600W ... |
IXXP12N65B4D1 | IXYS | 1.68 $ | 1000 | IGBTIGBT 650V 38A 160W T... |
IGBT 1200V 9.6A 62.5W TO247-3IGBT 1200V...
IGBT 1200V TO247-3IGBT
IGBT 1200V TO247-3IGBT 1200V 57A 200W T...
IGBT 600V TO-247 COPAKIGBT
INTEGRATED CIRCUITIGBT 600V 6A 40W Surf...
POWER MOSFET TO-3IGBT