IXXP12N65B4D1 Allicdata Electronics
Allicdata Part #:

IXXP12N65B4D1-ND

Manufacturer Part#:

IXXP12N65B4D1

Price: $ 1.68
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT
More Detail: IGBT 650V 38A 160W Through Hole TO-220
DataSheet: IXXP12N65B4D1 datasheetIXXP12N65B4D1 Datasheet/PDF
Quantity: 1000
50 +: $ 1.53304
Stock 1000Can Ship Immediately
$ 1.68
Specifications
Input Type: Standard
Supplier Device Package: TO-220
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 43ns
Test Condition: 400V, 12A, 20 Ohm, 15V
Td (on/off) @ 25°C: 13ns/158ns
Gate Charge: 34nC
Series: XPT™, GenX4™
Switching Energy: 440µJ (on), 220µJ (off)
Power - Max: 160W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
Current - Collector Pulsed (Icm): 70A
Current - Collector (Ic) (Max): 38A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Part Status: Active
Description

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The IXXP12N65B4D1 is a high-speed IGBT transistor designed for medium to high-power switching applications. This IGBT combines the best of both bipolar junction transistors and MOSFETs, offering the low gate-charge, low RDS(on) and fast switching characteristics of MOSFETs combined with the high-voltage ruggedness of BJTs. It is also suitable for motor control applications, LED lighting, and power supplies.

The IXXP12N65B4D1 is an N-channel IGBT with a maximum collector current rating of 12A and a continuous collector current rating of 10A. It has a VCE(sat) of 3.9 V at 6 A and an output capacitance of 122pF. The IXXP12N65B4D1 is equipped with a fast-recovery, active-clamp-based freewheeling diode to reduce switching losses and surge voltages. There is also an integrated soft recovery diode for more efficient operation.

The IXXP12N65B4D1 is typically used in motor control, high-power switching, power supplies and LED lighting applications. It is useful in these areas because it has low losses, low noise, and high-speed switching characteristics. The integrated soft recovery diode allows for more efficient switching, while the fast-recovery, active-clamp freewheeling diode helps reduce surge voltages and improve power efficiency.

The working principle of IXXP12N65B4D1 is based on the principle of bipolar transistor action. In the IXXP12N65B4D1, the gate and collector are connected together, forming the base of the transistor. A small current at the base causes the larger collector current to be switched on or off. In this way, the IXXP12N65B4D1 can act as a switch, turning on and off a substantial amount of current through the collector.

The IXXP12N65B4D1 is a great choice for applications where fast switching and low power losses are desired. Its high-speed switching performance and low gate charge make it an ideal choice for medium to high-power switching applications. Its integrated soft-recovery diode also provides efficient switching with minimal losses. It is also suitable for motor control, LED lighting, and power supply applications.

The specific data is subject to PDF, and the above content is for reference

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