IXYJ20N120C3D1

Switching Energy:	1.3mJ (on), 500µJ (off)
Base Part Number:	IXY*20N120
Supplier Device Package:	ISO247™
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	195ns
Test Condition:	600V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C:	20ns/90ns
Gate Charge:	53nC
Input Type:	Standard
Series:	GenX3™, XPT™
Power - Max:	105W
Vce(on) (Max) @ Vge, Ic:	3.4V @ 15V, 20A
Current - Collector Pulsed (Icm):	84A
Current - Collector (Ic) (Max):	21A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IXYJ20N120C3D1 application field and working principle

IXYJ20N120C3D1 is an insulated gate bipolar transistor (IGBT) produced by IXYS Corporation, a leader in power semiconductor components. It is a single IGBT device, with a integration compound of the insulated gate FET and bipolar transistor in a single package. It can be used in combination of low load loss, high speed switching and temperature characteristics, enabling high efficiency applications in the power conversion and motor drive.

Features

• Low conduction losses
• High speed switching
• Enhanced temperature characteristics
• Ultra High FWD current rating
• High input impedance
• High surge capability
• Low gate drive power
• Stable in temperature and operating environment

Applications

IXYJ20N120C3D1 single IGBTs find applications in wide range of power conversion and motor drive applications. It can be used in a variety of power applications, such as motor controllers, UPS, solar inverters, solar charger controllers, induction and synchronous motor controls and welding and power supply.

Working Principle

The IXYJ20N120C3D1 is a combination of an N-Channel MOSFET, with a Power MOSFET and a BJT in one package, offering low conduction losses, high switching speed, and high temperature performance. The N-channel MOSFET forms the controlling element of the device, providing the controllability. The Power MOSFET allows for higher energy dissipation and better noise immunity. The BJT enables low saturation voltage, higher current capability and very low switching losses.The operation of the device can be divided into two stages. First, a high enough voltage is applied to the gate which turns the N-channel MOSFET on and allows current to flow through the load. During this stage, a current is carried through the load and the Power MOSFET is bi-directionally conducting. In the second stage, the voltage at the gate is reduced and the N-channel MOSFET turns off, allowing the current to stop flowing through the load and the Power MOSFET is blocked.This allows for very low switching losses and very fast switching times, making it suitable for power applications with high performance demands. The IXYJ20N120C3D1 single IGBT is an excellent choice for applications where low switching losses and high speed switching are required.

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