Allicdata Part #: | IXYQ40N65C3D1-ND |
Manufacturer Part#: |
IXYQ40N65C3D1 |
Price: | $ 3.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT |
More Detail: | IGBT 650V 80A 300W Through Hole TO-3P |
DataSheet: | IXYQ40N65C3D1 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 3.34887 |
Input Type: | Standard |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 40ns |
Test Condition: | 400V, 30A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 23ns/110ns |
Gate Charge: | 66nC |
Series: | XPT™, GenX3™ |
Switching Energy: | 830µJ (on), 650µJ (off) |
Power - Max: | 300W |
Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 180A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | -- |
Part Status: | Active |
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The IXYQ40N65C3D1 transistor is a single IGBT that is used in a variety of applications. An IGBT (Insulated Gate Bipolar Transistor) is a type of transistor that combines the best characteristics of MOSFETs and BJTs. This makes them suitable for a variety of applications and makes them highly sought after in the electronics industry. The IXYQ40N65C3D1 transistor is a popular choice for power conversion and is used in switch mode power supply designs, motor control, solar inverters, and battery management systems.
At the heart of the IXYQ40N65C3D1 is a semiconductor structure that consists of two layers of semiconductor material. The two layers of material, commonly referred to as the emitter-base region and the collector-base region, are separated by a layer of insulating material. This allows for a highly efficient separation of current flow and allows for an increase in switching speeds. The IXYQ40N65C3D1 is capable of switching currents up to 65A and can handle voltages up to 650V.
In terms of operation, the IXYQ40N65C3D1 has the same basic principles as a MOSFET or BJT. When the transistor is in the off state, the emitter-base and collector-base regions are reverse biased and the transistor acts like an open switch. When the gate voltage is applied, the chip is turned on and current is allowed to flow through the transistor. This is known as saturation and allows for a reliable and consistent current flow.
The IXYQ40N65C3D1 is a popular choice for power conversion because of its high efficiency and capability in controlling higher currents. Additionally, the transistor has the ability to handle higher voltages and has a low gate threshold that allows for faster switching times. This makes it ideal for high frequency applications such as switching power supplies, motor control, and solar inverters.
The IXYQ40N65C3D1 is capable of handling both DC and AC current and can switch as quickly as 20ns. This makes it useful for a variety of applications such as switching power supplies, motor control, and solar inverters. Additionally, the IXYQ40N65C3D1 has low gate losses and can operate at temperatures up to 150° C. This makes it suitable for high temperature and high power applications.
The IXYQ40N65C3D1 is a versatile transistor and is suitable for many applications. It is highly efficient, capable of handling high currents, can handle high voltages, and has a low gate threshold that allows for faster switching times. This makes it an ideal choice for power conversion designs and switch mode power supply designs.
The specific data is subject to PDF, and the above content is for reference
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