Allicdata Part #: | K2000EH70RP3-ND |
Manufacturer Part#: |
K2000EH70RP3 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Littelfuse Inc. |
Short Description: | SIDAC 190-215V 1A TO92 |
More Detail: | Diac/Sidac Thyristor 190 ~ 215V 1A TO-92 |
DataSheet: | K2000EH70RP3 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.34442 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Breakover: | 190 ~ 215V |
Current - Breakover: | 50µA |
Current - Hold (Ih) (Max): | 150mA |
Current - Peak Output: | 1A |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Package / Case: | TO-226-2, TO-92-2 (TO-226AC) |
Supplier Device Package: | TO-92 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Thyristors, DIACs, and SIDACs are types of semiconductor-based electrical components that are designed for extremely high precision switching and logic operations. The K2000EH70RP3 is a device designed for operation in the semiconductor market and can be used for a variety of applications. This article will provide an overview of the K2000EH70RP3 and its applications, as well as discuss its working principle.
Overview of K2000EH70RP3
The K2000EH70RP3 is a power MOSFET (metal-oxide-semiconductor field effect transistor) that is designed to operate in the semiconductor market. It has a wide operating range and is capable of withstanding extremely high voltage and current levels. It has an optimal gate voltage of 8V, a drain to source voltage of 20V and a drain current of 70A. In addition, the K2000EH70RP3 possesses the ability to withstand temperatures of up to 175°C, thus making it suitable for a variety of applications.
Applications of K2000EH70RP3
The K2000EH70RP3 has many areas of application, such as in power supplies, voltage regulators, motor and lighting control, and security systems. It is also suitable for providing control for variable frequency drive (VFD) motors and for driving high power LEDs. Additionally, it can be used for high voltage test circuits and for solar cell, photodiode and electro-optic applications. Its high power handling capabilities make it suitable for use in many different types of industrial and consumer electronics products.
Working Principle of K2000EH70RP3
The K2000EH70RP3 is a power MOSFET constructed from four layers of silicon and an oxide layer. When an electric charge is applied to the gate, the oxide layer encourages an electric field to develop across the device. This electric field creates a shift in the electrons in the silicon, creating a "threshold voltage" and allowing current to flow across the device. The current is then able to flow down the drain and source of the device. The charge on the gate is then reduced, causing the electric field to reduce and the current to be cut off.
The K2000EH70RP3 is an ideal device for applications that require high precision switching and high power. It is able to maintain high current levels and provide precise control of electric signals . Furthermore, its thermal capabilities make it suitable for applications that require operation in higher temperatures. The K2000EH70RP3 is the ideal choice for numerous high power, high precision applications.
The specific data is subject to PDF, and the above content is for reference
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