KJB0T1932PA-A297

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The KJB0T1932PA-A297 is a field-effect transistor (FET) device, which is a three-terminal semiconductor device that utilizes a current flow between two terminals of an insulation substrate to control current flow between the two other terminals. This device is capable of varying its conductivity with respect to its gate voltage in order to control current flow in the channel between the drain and source regions.

The device is a field effect transistor (FET) with high-density, low-leakage P-doped structure and low-noise operation. It has a breakdown voltage of 15 volts, and its input capacitance is 2.7pF. It offers users an efficient and low noise operation for frequency and gain control applications.

The KJB0T1932PA-A297 is ideal for use in a variety of applications, including voltage-controlled amplifier applications, measuring and controlling currents, as well as for signal sourcing and receiving operations. It can also be used in high-reliability applications, such as in communication equipment, computers, and consumer electronics.

The KJB0T1932PA-A297 has two distinct working principles: voltage-controlled and electrostatic. In voltage-controlled operation, the gate-to-source voltage is applied to the gate terminal, which causes a change in the conductivity of the channel between the source and drain regions. This change in conductivity results in a current flow that is responsive to the gate voltage. In electrostatic operation, a current is passed through the gate and source regions, and this current causes the variation in the conductivity of the channel.

The KJB0T1932PA-A297 field-effect transistor device is an ideal choice for a variety of application fields in the current and signal processing industry. It provides reliable performance and low-noise operation for a variety of demanding projects.

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