
Allicdata Part #: | KPT06B8-3SA71-ND |
Manufacturer Part#: |
KPT06B8-3SA71 |
Price: | $ 0.00 |
Product Category: | Uncategorized |
Manufacturer: | ITT Cannon, LLC |
Short Description: | KPT 3C 3#20 SKT PLUG |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | * |
Part Status: | Active |
Description
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KPT06B8-3SA71 is a type of energy semiconductor device (also referred to as "power transistor") that is widely used in electronic circuits and devices. As a three-terminal evolution from the BJT, MOSFET, and JFET transistors, the KPT06B8-3SA71 presents a much more reliable and versatile option for most consumer and commercial applications.The KPT06B8-3SA71 is a voltage-controlled semiconductor device primarily designed for use in a wide range of amplifying and switching applications, from broad-level power amplifiers and motor driver circuits, to low-level analog switching and signal processing. It is also highly capable of driving high-speed logic devices, such as LCDs, digital switches, and LCD drivers. Furthermore, the KPT06B8-3SA71 can be configured and used in PWM switching circuits.In its most basic form, a KPT06B8-3SA71 device is a three-terminal, vertical, n-type, silicon gate, insulated-gate field-effect transistor (IGFET). It has three main components: gate, source, and drain. The gate terminal controls the device\'s off/on switching action, the source terminal carries current from the negative power supply, and the drain terminal moves charge (in the form of electrons) to the positive power supply. The unique feature of this device is that it operates with low power dissipation levels under both forward and reverse gate control.The overall operating principle of the KPT06B8-3SA71 revolves around the inherently low power dissipation capacity of the oxide-insulated gate. By controlling the voltage applied between the gate and source of the device, the surrounding oxide layer can be shifted to allow or prevent the flow of charges across the channel. If a sufficient amount of voltage is applied to the gate, the oxide layer can be considered "deactivated" which permits a current flow between the source and drain. On the other hand, if the gate voltage is reduced, the oxide layer will become "activated" which prevents the flow of current. This essential property of the KPT06B8-3SA71 is the principal mechanism by which it is used to amplifying and switching operations.The device comes with various features, all of which enable better performance and higher reliability. Firstly, its multiple pinning allows for the presence of both short-circuiting protection detected via the source terminal, and low standby power dissipation, as the KPT06B8-3SA71 is capable of operating on pulses as short as 1 µs. It is also able to automatically recognize the number of losses, as well as the presence or absence of load, enabling operations that require active current balancing. Finally, the device is also capable of integrating para-surge protection and low-cost EMI filtering for improved level of wave quality.Given its features, the KPT06B8-3SA71 is suitable for a wide range of applications. It can be used in power supplies, motor controls, UV lamp drivers, digital converters, low-frequency amplifiers, medical equipment, analog signal switching, and even in higher-frequency operations such as RFID circuits. It can also be used as a high-speed switching device, or as a general-purpose gate driver for controlling high-speed logic.In conclusion, the KPT06B8-3SA71 is a versatile and reliable semiconductor device that is well-suited for a number of applications, from low-level analog switching to high-speed logic operations. It features multiple pinning, low power dissipation, short-circuiting protection, active current balancing, para-surge protection, and EMI filtering, making it a highly suitable device for a myriad of applications.The specific data is subject to PDF, and the above content is for reference
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