L2C3-3090109E06000

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L2C3-3090109E06000 is a high-power, high-performance LED product, designed to replace metal halide, mercury vapor, sodium and other traditional light sources. It is made of high-brightness InGaN chips and packaging materials. The L2C3-3090109E06000 adopts optical technology to further improve the light extraction efficiency of the light source and ensure that the light is emitted in all directions.

Application Field:

L2C3-3090109E06000 is widely used in game halls, gyms, warehouses, factories, stores, schools, offices and other LED lighting fields.

Working Principle:

L2C3-3090109E06000 adopts high-brightness InGaN chips and special packaging materials, which can convert electrical energy directly and efficiently into visible light. InGaN semiconductors are composed of several layers, which form a "junction" between them. When an external electric field is applied, electrons from the n-type material flow to the p-type material, and electron holes from the p-type material flow to the n-type material. In this way, the current flows through the junction area, and the electrons and holes obtain energy simultaneously and shuttled back and forth between the two layers, and finally released in the form of photons. This is the working principle of semiconductor light-emitting diodes.

Benefit:

The light-emitting efficiency of L2C3-3090109E06000 is much higher than that of other traditional light sources, which means that it can save more power and save more energy. At the same time, it can realize highly efficient and environmental protection to meet the needs of different application scenarios.

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