LE28F4001CTS12-MPB-E Allicdata Electronics
Allicdata Part #:

LE28F4001CTS12-MPB-E-ND

Manufacturer Part#:

LE28F4001CTS12-MPB-E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ON Semiconductor
Short Description: IC FLASH 4M PARALLEL 32TSSOP
More Detail: FLASH Memory IC 4Mb (512K x 8) Parallel 32-TSSOP
DataSheet: LE28F4001CTS12-MPB-E datasheetLE28F4001CTS12-MPB-E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Description

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Memory is an important part of any computer system. It stores and processes information, allowing a machine to carry out complex tasks. The LE28F4001CTS12-MPB-E is a type of memory that is used in many commercial, industrial and military applications. In this article, we will explore the application field and working principle of the LE28F4001CTS12-MPB-E.

The LE28F4001CTS12-MPB-E is a non-volatile Flash memory product from Philips Electronics. It is a high-density, single-ported Flash memory device with a capacity of up to 4Mb. This chip has a built-in Advanced Data Protection System which provides an additional level of data protection. The LE28F4001CTS12-MPB-E is compatible with the Intel 8052 microcontroller, making it suitable for use in embedded systems that use this controller.

The LE28F4001CTS12-MPB-E is used in a variety of applications ranging from automotive to industrial and military. It is used as a storage medium in many microcontroller-based systems, such as those used in automotive, telecommunications and control systems. It is also ideal for use in mission-critical military applications, as it can store confidential information securely. Additionally, the device is used in many digital audio and video applications, where it can provide a high level of data transfer speed.

The LE28F4001CTS12-MPB-E employs the latest technology to provide the best performance and reliability. It features a low-voltage operation for increased efficiency and accuracy. The device has a 0.35 micron technology which allows for faster read/write times. Additionally, the device is equipped with an auto-time-exchange circuitry that protects data from random noise and power fluctuations.

The LE28F4001CTS12-MPB-E utilizes a novel three-level memory hierarchy which is based on a two-level static RAM and two-level flash memory. The static RAM is used for direct access, while the flash memory is used for data storage. The device also employs a unique dual-access control system which enables simultaneous data reading and writing. This makes the device ideal for applications where real-time data communication is required.

The LE28F4001CTS12-MPB-E also has a few additional features which make it even more attractive. First, it has a device-level write-protection that prevents unintentional changes to programmed memory. Additionally, it has a built-in error-checking and correction circuitry which increases reliability and reduces the chance of data corruption. Finally, it has an I/O pin multiplexing function which reduces the number of pins and simplifies board-level design.

In conclusion, the LE28F4001CTS12-MPB-E is one of the most advanced Flash memory products available today. It is widely used in many commercial, industrial and military applications, thanks to its high-density memory, reliable error-checking and correction, and advanced data protection system. Its various features make it an ideal choice for applications that require real-time data communication, data storage, and high-level security.

The specific data is subject to PDF, and the above content is for reference

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