LH5164A-10L Allicdata Electronics
Allicdata Part #:

425-1830-5-ND

Manufacturer Part#:

LH5164A-10L

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Sharp Microelectronics
Short Description: IC SRAM 64K PARALLEL 28DIP
More Detail: SRAM Memory IC 64Kb (8K x 8) Parallel 100ns 28-DI...
DataSheet: LH5164A-10L datasheetLH5164A-10L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 64Kb (8K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -10°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-DIP
Description

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The LH5164A-10L is a 4,194,304-bit high-speed CMOS Static RAM organized as 262,144 words by 16 bits. It has a wide supply voltage range (3.3V to 5.5V) and is suitable for low power and high speed operation. This device is fabricated using a high-density CMOS process technology, and offers access times of 10 ns and a power supply current of 10 mA (max). This device is ideal for use in peripheral circuits for computers, for video display terminals, for personal computers, for data communication equipment, for educational devices and for automotive applications.
The LH5164A-10L is a type of static random access memory (SRAM). SRAM is a type of memory chip that stores data while the computer power is on. SRAM is used in electronics to store data and programs, and it is faster than dynamic random access memory (DRAM). SRAM can store data and instructions extremely quickly, making it ideal for use in applications such as microprocessors, network switches, and digital signal processors.
The LH5164A-10L is particularly useful when high speed and low power are important. It has a wide supply voltage range (3.3V to 5.5V) and is suitable for low power and high speed operation. With access times of 10 ns, this device can be used for caches, buffers, and registers. It is also capable of greater memory densities, faster data access and bit organization than is achievable with conventional 6T or 8T SRAMs.
The basic principle of operation for the LH5164A-10L is that data is read from and written to a two-transistor (2T) SRAM cell, where each cell is addressable by a word line and a bit line. The memory cell is composed of a pair of inverters which are used to store a single bit of information. Word lines activate the cells in a row, while bit lines activate each cell. When the memory cell is accessed, the data is read from the cell via the cross-coupled inverters. When the data is written to the cell, the signal on the bit line eliminates the signal on the cross-coupled inverters, thereby writing the data to the cell.
The LH5164A-10L is an example of a modern 4Mb fast access static RAM chip. It is suitable for applications where speed and low power consumption are essential. With its wide supply voltage range and fast access times, the LH5164A-10L is ideal for use in high-performance peripherals for computers, video displays, personal computers, data communications equipment, automotive applications, and more. Moreover, this device offers greater memory densities, faster data access and bit organization than is achievable with traditional 6T or 8T static RAMs.

The specific data is subject to PDF, and the above content is for reference

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