LHF00L13 Allicdata Electronics
Allicdata Part #:

425-1882-ND

Manufacturer Part#:

LHF00L13

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Sharp Microelectronics
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH Memory IC 32Mb (2M x 16) Parallel 90ns 48-T...
DataSheet: LHF00L13 datasheetLHF00L13 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (2M x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Description

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Memory is a fundamental component of any digital computer, and the device used to achieve the memory task is an important factor in the overall performance of the system. The LHF00L13 is a memory device developed by the STMicroelectronics (STM) company, which is based on a 1.8V 32B Flash memory technology and is designed for low-power applications. This article will discuss the application field of the LFH00L13 as well as its working principle.

Application field of LFH00L13

The LFH00L13 is a 1.8V 32B Flash memory that has been developed to support various applications ranging from various mobile devices, such as smartphones, tablets, GPS and MP3 players, to automotive and industrial applications, including audio and video, entertainment, industrial and medical applications. Furthermore, due to its low-power consumption and large storage capacity, the LFH00L13 is also suitable for use in applications that require extended battery life, such as portable medical systems, electric vehicles and renewable energy systems.

Working principle of LHF00L13

The LHF00L13 uses a 1.8V 32B Flash memory. The memory comprises of a group of memory cells, each of which consists of a source, a drain and a floating gate, which is separated from the drain and source by a thin gate dielectric. During a write operation, charged particles are injected into the floating gate to create a threshold voltage, which can be used to store the desired data. The read operation works in the opposite way. When a voltage is applied to the drain, electrons are drawn away from the floating gate, allowing the threshold voltage to be sensed. This data is then used to read the contents of the memory cell.

The LHF00L13 is designed for low-power applications because it is able to switch between read and write operations without generating excessive power. This is achieved by the use of a two-transistor sense amplifier, which is designed to reduce the need for power. The device also features a data reference voltage (to control access to the memory) that is low enough to minimize power requirements.

In addition to the low-power characteristics of the LHF00L13, its memory cell also includes an embedded error correction code (ECC) that helps to reduce the occurrence of data errors. This ensures that data is stored safely and accurately in the memory device.

Conclusion

The LFH00L13 is a low-power memory device developed by STM that is suitable for various applications, such as mobile devices, automotive and industrial applications. The device uses a 1.8V 32B Flash memory, which is unique in that its read and write operations require minimal power. The device also features an embedded error correction code that helps to reduce the occurrence of data errors. This makes the LFH00L13 an ideal memory device for low-power applications.

The specific data is subject to PDF, and the above content is for reference

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