M24512-DRMN3TP/K Allicdata Electronics

M24512-DRMN3TP/K Integrated Circuits (ICs)

Allicdata Part #:

497-14423-2-ND

Manufacturer Part#:

M24512-DRMN3TP/K

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EEPROM 512K I2C 1MHZ 8SO
More Detail: EEPROM Memory IC 512Kb (64K x 8) I²C 1MHz 450ns 8-...
DataSheet: M24512-DRMN3TP/K datasheetM24512-DRMN3TP/K Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Write Cycle Time - Word, Page: 4ms
Base Part Number: M24512
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8 V ~ 5.5 V
Memory Interface: I²C
Access Time: 450ns
Series: Automotive, AEC-Q100
Clock Frequency: 1MHz
Memory Size: 512Kb (64K x 8)
Technology: EEPROM
Memory Format: EEPROM
Memory Type: Non-Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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M24512-DRMN3TP/K is an integrated circuit memory device that uses an ion-implanted Floating Gate semiconductor technology to store information in a non-volatile manner. The M24512-DRMN3TP/K is used for a variety of applications including data logging, remote control, medical data capture, and system monitoring. Additionally, the M24512-DRMN3TP/K can be used as a non-volatile memory in industrial, military, and automotive applications.

The M24512-DRMN3TP/K uses a six-transistor memory cell, also known as a 6T-Flash cell, for non-volatile data storage. The 6T-Flash memory cell stores data in the form of a digital signal. In a 6T-Flash cell, a gate of a transistor is connected with a gate voltage. An electrical charge is stored at the gate and this electrical charge acts as a memory cell. When a logic signal is applied to the gate, the charge at the gate is turned on or off and the stored data is read or written.

The M24512-DRMN3TP/K is the first generation of parts to incorporate this 6T-Flash technology in a memory array. The memory array is composed of multiple memory cells arranged in a grid, which allows multiple bits of data to be stored in the same memory array. The array also features a redundant word line and sense amplifier redundancy, allowing for high data integrity. Moreover, the M24512-DRMN3TP/K offers increased data retention, faster read/write performance, and improved reliability.

The M24512-DRMN3TP/K is a non-volatile memory device which means that the data stored in it can persist even when power is not applied. The device has an internal control circuit which controls the read/write operations and ensures that the data is not corrupted during writes. Furthermore, the device is designed to minimize power consumption and minimize the amount of time spent refreshing the memory cells. The device can operate within a wide temperature range and is able to work in extreme conditions.

The M24512-DRMN3TP/K is ideal for applications where high reliability is required, such as industrial and automotive applications. The device is also suitable for applications where data logging and data capture need to take place in extreme environments. Additionally, the device is well suited for medical applications, such as data capture from medical monitors and remote control of medical devices.

The M24512-DRMN3TP/K utilizes a 6T-Flash memory cell to store data. This memory cell stores digital data in the form of a logic signal. When a logic signal is applied to the gate, the charge at the gate is turned on or off, passing or releasing the data stored in the memory cell. The 6T-Flash memory cell utilizes a redundant word line and fuses, ensuring high data integrity. Additionally, the device also uses a power-reducing scheme, which reduces power consumption and reduces the amount of time spent refreshing the memory cells.

The M24512-DRMN3TP/K is a 6T-Flash memory device designed for industrial, automotive, and medical applications which require high reliability and ease of use. The device has an internal control circuit which controls the read and write operations and a power-saving scheme which reduces the amount of power consumed. The device is optimized for use in extreme conditions and offers increased data retention and improved performance. The M24512-DRMN3TP/K is well suited for applications where data logging and data capture in extreme environments are required.

The specific data is subject to PDF, and the above content is for reference

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