| Allicdata Part #: | M34F04-WMN6TP-ND |
| Manufacturer Part#: |
M34F04-WMN6TP |
| Price: | $ 0.25 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | STMicroelectronics |
| Short Description: | IC EEPROM 4K I2C 400KHZ 8SO |
| More Detail: | EEPROM Memory IC 4Kb (512 x 8) I²C 400kHz 900ns 8-... |
| DataSheet: |  M34F04-WMN6TP Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.25000 |
| 10 +: | $ 0.24250 |
| 100 +: | $ 0.23750 |
| 1000 +: | $ 0.23250 |
| 10000 +: | $ 0.22500 |
| Write Cycle Time - Word, Page: | 5ms |
| Base Part Number: | M34F04 |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Voltage - Supply: | 2.5 V ~ 5.5 V |
| Memory Interface: | I²C |
| Access Time: | 900ns |
| Series: | -- |
| Clock Frequency: | 400kHz |
| Memory Size: | 4Kb (512 x 8) |
| Technology: | EEPROM |
| Memory Format: | EEPROM |
| Memory Type: | Non-Volatile |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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M34F04-WMN6TP is an advanced storage device engineered by STMicroelectronics. Based on the latest Magnetic Random Access Memory (MRAM) technology, M34F04-WMN6TP is a non-volatile memory (NVM) that offers fast write/read access time, operational frequency up to 16 MHz, and high endurance in a pin-compatible Wafer-Level Chip-Scale package that is only 6x6x0.8 mm in size. This makes it an ideal solution for a wide range of embedded applications in automotive and industrial systems.
Applications
The M34F04-WMN6TP can be used for different applications in the automotive and industrial sectors, such as:
- Engine and transmission control units
- Lamp control units
- Battery management systems
- Remote control systems
- Autonomous vehicles
- Building automation systems
- Medical equipment
- Industrial control systems
- Energy management systems
Working Principle
The M34F04-WMN6TP is based on the latest Magnetic Random Access Memory (MRAM) technology. MRAM is a non-volatile memory technology that uses an array of magnetic cells to store data. Each cell consists of two magnetic plates, an access transistor and a rectifier, which is controlled by an external magnetic field. This process is known as magnetization reversal. When the external field is reversed, the cells in the array switch their magnetization states, thus changing their logic states and writing data to the array.
The M34F04-WMN6TP combines CMOS control circuitry with MRAM cells to provide fast, non-volatile memory. It offers extremely fast write/read access times, up to 16 MHz operational frequency and unlimited endurance. It is also radiation tolerant and is compliant with the Automotive Electronics Council\'s ISO 26262 automotive safety standard.
In addition, the M34F04-WMN6TP offers system-level integration in a reduced form-factor, a space-saving 6x6x0.8mm Wafer-Level Chip-Scale package, to meet the requirements of various automotive and industrial applications.
In conclusion, the M34F04-WMN6TP is a highly advanced storage device engineered for automotive and industrial systems. It provides fast write/read access times, up to 16 MHz operational frequency, high endurance and radiation tolerance. Its small size and pin-compatible package make it an ideal solution for space-constrained applications in the automotive and industrial sectors.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| M34F04-WMN6TP | STMicroelect... | 0.25 $ | 1000 | IC EEPROM 4K I2C 400KHZ 8... |
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