M36L0R7050U3ZSE

Memory: M36L0R7050U3ZSE application field and working principle

Memory technology has attracted more and more attention in the field of semiconductor design and rapid development of data acquisition and communication technology. The M36L0R7050U3ZSE memory is a DDR3L type memory. It is an ultra low voltage SDRAM memory module which integrates the single in-line memory modules. This article will introduce the application field and working principle of the M36L0R7050U3ZSE memory.

Application field

The M36L0R7050U3ZSE is designed for low power applications, such as notebook computers and low-power information appliances. This memory module supports the DDR3L type, and it consists of 1GB/2GB of DDR3L 1600 CL11 SDRAM modules. The module has a capacity of 2GB maximum. This type of memory module supports both double-sided and single-sided memory modules. It is suitable for applications where operating voltage is 1.35V or 1.5V.

This DDR3L type memory module is available in a 204-pin SODIMM (Small Outline Dual Inline Memory Module). It has a serial presence detect (SPD) that enables the system to automatically detect the memory module information, such as speed, size, voltage and latency. The type of memory module has a single sided gate process which provides high speed operation, packaging and low-power operation.

The M36L0R7050U3ZSE can be used in various types of application, such as embedded systems, consumer electronics, consumer products, communications equipment and industrial products. The memory is compatible with Windows, Linux, Mac OS X and other major operating systems. It is also compatible with multiple motherboard and chipset architectures.

Working Principle

The DDR3L type memory module that the M36L0R7050U3ZSE adopts supports x8 and x16 bit memory width. The module also supports single-channel or dual-channel architecture. The memory works with both 1.35V and 1.5V voltage. The M36L0R7050U3ZSE is capable of speeds up to 1600 MT/s and a data transfer rate of 12.8GB/s. It also supports auto-refresh, self-refresh and power down modes.

The M36L0R7050U3ZSE memory module carries dynamic on-die termination (ODT) and addresses up to 16GB of memory. It also supports various error detection and correction techniques. The memory module uses a low-voltage differential signaling communication protocol that is used to transmit data across an electrical connection. It also uses an external data register that is used to store data that is written or read from the memory module.

The M36L0R7050U3ZSE memory module supports up to eight DIMMs with a total capacity of up to 16GB. The memory module also supports error correcting codes (ECC) to detect and correct memory errors. ECC uses parity bits to detect and correct single-bit errors in the data being transmitted. It supports on-device thermal management to dynamically adjust the operating frequency of the memory module. The memory module also supports thermal sensor to detect the temperature in the memory module.

Conclusion

From the above, we can conclude that the M36L0R7050U3ZSE memory module is an ideal solution for low power applications. It supports low-voltage operations in 1.35V or 1.5V. The memory module supports up to 16GB of memory, and it is compatible with multiple motherboards and chipset architectures. The module also supports various error detection and correction techniques and on-device thermal management.