Allicdata Part #: | M36P0R8060E0ZAQFTR-ND |
Manufacturer Part#: |
M36P0R8060E0ZAQF TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH PSRAM 320M |
More Detail: | Memory IC |
DataSheet: | M36P0R8060E0ZAQF TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Base Part Number: | M36P0R8060 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
M36P0R8060E0ZAQF TR Application Field and its Working Principle
M36P0R8060E0ZAQF TR is an advanced memory technology developed by Mitsubishi Electric Company. It is a component of their advanced memory design that is applicable in various areas. The usage of this technology is mainly found in data acquisition systems, automotive applications, embedded systems, robotics and other emerging technologies. In addition, it is also applicable in computer storage media and communication systems.
M36P0R8060E0ZAQF TR is a type of semiconductor technology that combines two active components, two inactive components and two transistor-based systems into one. This technology enables memory transfer signals with high speed. The component of this technology is divided into two categories - active component and passive component.
Active Component
The active component of this technology is mainly composed of four active elements - memory cells, transistors, resistors and capacitors. Memory cells are made up of four transistors in combination with four resistors. The transistors are divided into two categories - the Diffused Silicon Transistors (DST) and the Magnetically Programmed Transistor (MPT). The DSTs apply voltages to change the state of the transistor from on to off and vice versa. On the other hand, the MPTs are used to store data in a non-volatile manner.
The resistors and capacitors are attached to each memory cell, to provide isolation between each cell, and to increase the signal strength. The resistors also act as gatekeepers, allowing only certain signals to pass through. The capacitors act as buffers and enhance the signal strength.
Passive Component
The second half of the component is the passive component. This component consists of two pairs of wires- the Address Bus and the Data Bus. The Address Bus is used to send address signals to the memory cells. The Data Bus is used to send data and address signals to the memory cells.
The working principle of this technology is quite simple. It starts with the Address Bus that sends an address signal to the memory cells. The memory cells then store the data that is sent by the Address Bus. The Data Bus then sends a data signal to the memory cell. The memory cell then stores the data in a non-volatile manner.
Conclusion
M36P0R8060E0ZAQF TR is an advanced memory technology developed by Mitsubishi Electric Company and is used in various types of applications. The two components of this technology are the active and the passive components. The active component consists of memory cells, transistors, resistors and capacitors. The passive component consists of the Address Bus and the Data Bus. The working principle of this technology is quite simple. It starts with the Address Bus sending an address signal to the memory cells. The Data Bus then sends a data signal to the memory cells and stores the data in a non-volatile manner.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
M36P08K4Q4 | JAE Electron... | 0.08 $ | 1000 | M36 SERIES, SOCKET CONTAC... |
M36P08K4Q3 | JAE Electron... | 0.09 $ | 1000 | CONN PIN CRIMP MX36 GOLDP... |
M36P08K4Q3-C100 | JAE Electron... | 10.35 $ | 1000 | CONN PIN CRIMP MX36 GOLDP... |
M36P0R8060E0ZAQF TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH PSRAM 320MMemory... |
M36P0R8060E0ZAQE | Micron Techn... | 0.0 $ | 1000 | IC FLASH PSRAM 320MMemory... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...