| Allicdata Part #: | M39003/01-3065/HSD-ND |
| Manufacturer Part#: |
M39003/01-3065/HSD |
| Price: | $ 1.52 |
| Product Category: | Capacitors |
| Manufacturer: | Vishay Sprague |
| Short Description: | CAP TANT 0.22UF 20% 50V AXIAL |
| More Detail: | 0.22µF Hermetically Sealed Tantalum Capacitors 50V... |
| DataSheet: |  M39003/01-3065/HSD Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 1.38159 |
Specifications
| Operating Temperature: | -55°C ~ 125°C |
| Failure Rate: | S (0.001%) |
| Features: | Military |
| Manufacturer Size Code: | A |
| Lead Spacing: | -- |
| Height - Seated (Max): | -- |
| Size / Dimension: | 0.135" Dia x 0.286" L (3.43mm x 7.26mm) |
| Package / Case: | Axial |
| Mounting Type: | Through Hole |
| Lifetime @ Temp.: | -- |
| Series: | Military, MIL-PRF-39003/1, CSR13 |
| ESR (Equivalent Series Resistance): | -- |
| Type: | Hermetically Sealed |
| Voltage - Rated: | 50V |
| Tolerance: | ±20% |
| Capacitance: | 0.22µF |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Description
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Tantalum capacitors are capable of storing electrical energy and connecting circuits in a reliable and economical way. The M39003/01-3065/HSD is a semiconductor device made of tantalum which applies inverted physical principles to achieve efficient operation in circuit-level applications. Specifically, this device uses the leak-rate principle in order to provide temporary electrical storage.The M39003/01-3065/HSD is capable of storing energy through the application of an electrical potential across its two electrodes. The design achieves this by building a capacitor out of two electrodes, one which is anode and the other which is cathode, and insulating them by a dielectric layer. During operation, a reversible current is allowed to be drawn in order to store charge on the device. This is achieved by the application of a capacitance between the two electrodes.In terms of the working principle behind the M39003/01-3065/HSD device, it works through the utilization of a non-linear device referred to as a ‘gate’. This gate is connected to one of the two electrodes and works to modulate the charge within the device. During the power cycle, the gate triggers the device to be activated when the input voltage is applied across it. The device then starts to store energy, at a rate dependent on the current.The principle of the M39003/01-3065/HSD device allows for a wide range of applications. For example, the device can be used in low voltage power supply systems to provide a low impedance power storage, which is the process of storing large amounts of energy at lower voltage levels. Additionally, the device can be used for power supply backup, to power devices in a power-outage situation, and as a buffer during voltage surges.The advantages of using tantalum capacitors in circuit applications are numerous. The M39003/01-3065/HSD device is not only highly reliable in its operation, it also offers a high degree of flexibility. This offers engineers the ability to customize the device’s characteristics according to given conditions, and consequently, the device is suitable for a range of applications in various types of circuits.In addition to providing electrical storage and flexibility, the M39003/01-3065/HSD also has good thermal and physical properties. Due to its dielectric layer, the device is highly resistant to thermal shock and can withstand a wide range of temperatures. It is also a small and lightweight component, making it suited for a variety of applications.Furthermore, due to its desirability in terms of dielectric stability and its high reliability, the M39003/01-3065/HSD is a popular choice for various types of applications. In particular, the device is commonly used in military aerospace and aerospace, telecommunications, automotive, consumer electronics, and medical industry applications.In conclusion, the M39003/01-3065/HSD device is a quite efficient semiconductor device made of tantalum. It utilizes the leak-rate principle in order to provide temporary electrical storage and is favored in a variety of applications due to its high reliability, flexibility, and physical properties.
The specific data is subject to PDF, and the above content is for reference
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