M39003/01-7102/HSD Allicdata Electronics
Allicdata Part #:

M39003/01-7102/HSD-ND

Manufacturer Part#:

M39003/01-7102/HSD

Price: $ 18.75
Product Category:

Capacitors

Manufacturer: Vishay Sprague
Short Description: CAP TANT 100UF 5% 20V AXIAL
More Detail: 100µF Hermetically Sealed Tantalum Capacitors 20V ...
DataSheet: M39003/01-7102/HSD datasheetM39003/01-7102/HSD Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
20 +: $ 17.03700
Stock 1000Can Ship Immediately
$ 18.75
Specifications
Series: Military, MIL-PRF-39003/1, CSR13
Packaging: Bulk 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Capacitance: 100µF
Tolerance: ±5%
Voltage - Rated: 20V
Type: Hermetically Sealed
ESR (Equivalent Series Resistance): --
Operating Temperature: -55°C ~ 125°C
Lifetime @ Temp.: --
Mounting Type: Through Hole
Package / Case: Axial
Size / Dimension: 0.351" Dia x 0.786" L (8.92mm x 19.96mm)
Height - Seated (Max): --
Lead Spacing: --
Manufacturer Size Code: D
Features: Military
Failure Rate: C (0.01%)
Description

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Tantalum CapacitorsTantalum capacitors are capacitors that use tantalum as the anode and a manganese dioxide dielectric. These capacitors offer small size, low leakage, and high capacitance compared to other types of capacitors. With their compact size and high capacitance, tantalum capacitors are an ideal choice for high-density applications.The M39003/01-7102/HSD is an example of a type of tantalum capacitor. This device is an axial-lead, solid electrolyte, tantalum capacitor. It has a capacitance of 100 μF and a maximum voltage rating of 35 V. It can operate over a wide temperature range of -55°C to +125°C. This device is ideal for use in harsh, high-temperature, and high-reliability applications.The M39003/01-7102/HSD uses tantalum as the anode and manganese dioxide as the dielectric. The anode is formed by forming a thin film of tantalum nitride (TaN) on a rod of tantalum. The manganese dioxide (MnO2) is formed by sputtering manganese on a tantalum substrate. The two layers are then sintered together to form the anode/dielectric structure. This structure is then encapsulated in a cylinder of epoxy to form the final capacitor.The working principle of a tantalum capacitor is simple. When a voltage is applied to the anode, electrons from the tantalum are attracted to the dielectric, creating an electric field between the two layers. This electric field attracts free electrons from the dielectric, creating a storage of electric charge. When the electric field is removed, these free electrons are released back into the dielectric. This creates a feedback loop that maintains the stored energy for a given period of time.The M39003/01-7102/HSD tantalum capacitor is ideal for use in a variety of applications. It is suitable for use in applications such as sensors, data acquisition systems, motion control circuits, automotive electronics, telecommunication systems, and power supplies. The device’s compact size and high capacitance make it ideal for use in high-density applications. It is also well-suited for harsh, high-temperature, and high-reliability applications. The M39003/01-7102/HSD is an excellent choice for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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