Allicdata Part #: | M39003/03-0173-ND |
Manufacturer Part#: |
M39003/03-0173 |
Price: | $ 18.12 |
Product Category: | Capacitors |
Manufacturer: | Vishay Sprague |
Short Description: | CAP TANT 56UF 10% 35V AXIAL |
More Detail: | 56µF Hermetically Sealed Tantalum Capacitors 35V A... |
DataSheet: | M39003/03-0173 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
20 +: | $ 16.47480 |
Operating Temperature: | -55°C ~ 125°C |
Failure Rate: | M (1%) |
Features: | Military |
Manufacturer Size Code: | D |
Lead Spacing: | -- |
Height - Seated (Max): | -- |
Size / Dimension: | 0.351" Dia x 0.786" L (8.92mm x 19.96mm) |
Package / Case: | Axial |
Mounting Type: | Through Hole |
Lifetime @ Temp.: | -- |
Series: | Military, MIL-PRF-39003/3, CSR23 |
ESR (Equivalent Series Resistance): | -- |
Type: | Hermetically Sealed |
Voltage - Rated: | 35V |
Tolerance: | ±10% |
Capacitance: | 56µF |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Tantalum capacitors are one type of electrolytic capacitor and are made using a metal oxide film with either a sintered Ta2O5 or MnO2 tantalum anode. Unlike standard aluminum electrolytic capacitors, the oxide-film dielectric of tantalum capacitors retains its low dielectric constant during thermal changes. This makes them well suited for use in temperature compensating networks as they maintain a uniform capacitance over a wide range of temperatures.
M39003/03-0173 Application Field and Working Principle
M39003/03-0173 tantalum capacitors have become popular in many different electronic device applications. They are used in mobile phones, computers, toy robots, disks, and other electrical equipment due to their low-disturbance and high-performance characteristics.
The working principle of M39003/03-0173 tantalum capacitors is based on the dielectric nature of oxide. The oxide layer functions as the dielectric layer between two metal plates, creating a capacitor. Electric current is conducted through the oxide layer by ions, rather than electrons in a typical capacitor. This property provides the tantalum capacitor with advantages like higher capacitance, higher voltage rating, low equivalent series resistance, and less bulk than comparable aluminum electrolytic capacitors.
In a typical M39003/03-0173 tantalum capacitor, a tantalum oxide undergoes electrochemical conversion (including an anodic oxidation reaction) to form a solid oxide dielectric layer. The metal oxide film is then placed between two electrical connectors and a voltage is applied. This voltage causes an electrochemical reaction (called “charging”), during which ions are migrated between the electrodes and the dielectric layer, creating an electric field. This electric field creates a charge separation, which in turn stores electrical energy.
The amount of energy stored depends primarily on the thickness of the oxide layer, the voltage applied, and the magnitude of the electric field. The capacitance value of the capacitor is determined by the area of the electrodes, the dielectric constant of the oxide film, and the distance between the two electrodes.
In electronic products, M39003/03-0173 tantalum capacitors provide a range of advantages over standard aluminum electrolytic capacitors. Not only do they have higher capacitance and voltage ratings, but they also have a lower equivalent series resistance and a longer switching time.
Tantalum capacitors also have relatively low leakage. This is beneficial in applications where low leakage current could cause circuit malfunction or instability. The oxide layer also provides superior temperature and frequency response characteristics, making them very reliable and suitable for a wide range of applications.
Overall, M39003/03-0173 tantalum capacitors are an excellent choice for a variety of applications due to their low leakage, superior temperature and frequency response, and high performance. They are well suited for use in circuits that require temperature compensation, such as radiometers, voltage regulators, and other systems that require low-disturbance performance.
The specific data is subject to PDF, and the above content is for reference
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