M39003/09-0145/HSD

Operating Temperature:	-55°C ~ 125°C
Failure Rate:	P (0.1%)
Features:	Military
Manufacturer Size Code:	D
Lead Spacing:	--
Height - Seated (Max):	--
Size / Dimension:	0.351" Dia x 0.786" L (8.92mm x 19.96mm)
Package / Case:	Axial
Mounting Type:	Through Hole
Lifetime @ Temp.:	--
Series:	Military, MIL-PRF-39003/9, CSR21
ESR (Equivalent Series Resistance):	95 mOhm
Type:	Hermetically Sealed
Voltage - Rated:	20V
Tolerance:	±5%
Capacitance:	68µF
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Tantalum Capacitors

Tantalum capacitors are widely used in many areas of technology, from consumer electronics and automotive electronics to medical and military devices. Due to their excellent electrical properties, high temperature stability and small size, they are ideal for high-frequency circuits, where size and weight are a major factor. This article will focus on M39003/09-0145/HSD application field and working principle.M39003/09-0145/HSD capacitor is a high voltage, low loss surface mount tantalum capacitor. This type of capacitor is manufactured using a hybrid construction, which combines a traditional metal film layer with a dielectric layer of tantalum pentoxide for increased capacitance. It features high ripple current and long life, excellent thermal stability and low ESR at high frequencies. This makes it ideal for use in high frequency applications such as RF power amplifiers, microwave ovens, RF detectors and video lines.The construction of the M39003/09-0145/HSD capacitor is based on theMEMS (Micro ElectroMechanical Systems) technology. The metal film is constructed using thin film deposition techniques, and the tantalum pentoxide layer is deposited by chemical vapor deposition. The capacitance of this type of capacitor is determined by the thickness and spacing of the metal film layers, and the permittivity of the dielectric layer.The working principle of the M39003/09-0145/HSD capacitor is based on the dielectric properties of the tantalum pentoxide layer. When voltage is applied to the capacitor terminals, electric field lines are generated along the surface of the metal film. These field lines intersect the surface of the tantalum pentoxide layer, causing a dielectric displacement. As this displacement takes place, a charge is stored within the capacitor, creating a capacitance between the metal film and the dielectric layer.The M39003/09-0145/HSD capacitor has a wide range of applications, including power supplies, DC-DC converters, automotive electronics and RF circuits. It is also suitable for sensitive circuits such as medical equipment, communication equipment, and process control systems. It is highly reliable, with a long life and excellent thermal stability, making it the ideal choice for many high-frequency and sensitive devices.

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