M39003/09-2003/HSD

Operating Temperature:	-55°C ~ 125°C
Failure Rate:	B (0.1%)
Features:	Military
Manufacturer Size Code:	C
Lead Spacing:	--
Height - Seated (Max):	--
Size / Dimension:	0.289" Dia x 0.686" L (7.34mm x 17.42mm)
Package / Case:	Axial
Mounting Type:	Through Hole
Lifetime @ Temp.:	--
Series:	Military, MIL-PRF-39003/9, CSR21
ESR (Equivalent Series Resistance):	65 mOhm
Type:	Hermetically Sealed
Voltage - Rated:	6V
Tolerance:	±20%
Capacitance:	150µF
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Tantalum Capacitors: M39003/09-2003/HSD Application Field and Working Principle

Tantalum capacitors provide great power density and versatility of electrical and environmental operation. It can be used in any electronic system to reduce losses, enhance energy efficiency, and reduce electromagnetic interference. They are widely used in military and aerospace applications, energy storage, and automotive systems.In this article, we will take a look at the application field and working principle of the M39003/09-2003/HSD tantalum capacitor.

Application Field

The  M39003/09-2003/HSD is a radial-leaded, hermetically sealed type tantalum capacitor. It offers excellent performance in both high-temperature and high-grade applications, making it suitable for fields such as computer, automotive, information storage, communication, portable devices, and consumer electronics.The M39003/09-2003/HSD is also ideal for high-speed Ethernet and other signal filtering applications, due to its low profile and high performance design. It is capable of handling RF frequencies up to 6GHz and has a nominal capacitance of between 4.7 to 470µF (microfarads). The M39003/09-2003/HSD can operate at operating temperatures of -55 to +125 degrees Celsius.

Working Principle

Inside a M39003/09-2003/HSD tantalum capacitor there are two terminals separated by a dielectric material. This material is usually a tantalum oxide layer formed on the surface of a tantalum metal base.When a voltage is applied across the terminals of the tantalum capacitor, electrons from the negative electrode repel electrons from the positive electrode, creating an imbalance of electrons. This separates the electrodes and forms an electric field. This electric field is responsible for storing energy in the form of an electrostatic field. The amount of charge stored depends on the voltage applied across the terminals and the size, or capacitance, of the capacitor. This is why tantalum capacitors are especially useful for storing charges in order to reduce loss, improve efficiency, and reduce electromagnetic interference. Additionally, the structure of the tantalum capacitor helps reduce noise and improve signal integrity in high-frequency applications. The dielectric layer of the capacitor offers excellent insulation and low leakage current. It also has excellent long-term reliability and can withstand high voltage without failure.

Conclusion

The M39003/09-2003/HSD is a hermetically sealed type tantalum capacitor that offers excellent performance in both high-temperature and high-grade applications. It is suitable for fields such as computer, automotive, information storage, communication, portable devices, and consumer electronics. The capacitor also offers excellent insulation and low leakage current, due to its dielectric layer, as well as excellent long-term reliability. Overall, the M39003/09-2003/HSD tantalum capacitor provides high-power density and versatility of electrical and environmental operation, making it a great choice for a wide range of applications.

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