M39003/09-2040H

Operating Temperature:	-55°C ~ 125°C
Failure Rate:	B (0.1%)
Features:	Military
Manufacturer Size Code:	C
Lead Spacing:	--
Height - Seated (Max):	--
Size / Dimension:	0.289" Dia x 0.686" L (7.34mm x 17.42mm)
Package / Case:	Axial
Mounting Type:	Through Hole
Lifetime @ Temp.:	--
Series:	Military, MIL-PRF-39003/9, CSR21
ESR (Equivalent Series Resistance):	110 mOhm
Type:	Hermetically Sealed
Voltage - Rated:	20V
Tolerance:	±5%
Capacitance:	47µF
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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Tantalum Capacitors

M39003/09-2040H Application Field and Work Principle

Tantalum capacitors are often requested for military applications due to their high reliability, long-term stability, small size, and low cost. The M39003/09-2040H is a Military Grade Base Metaled Thin Film Epoxy Molding that belongs to the family of Tantalum Capacitors. These capacitors are designed for use in high-reliability, military–grade applications such as telecommunications, computers, aerospace and defense, power supplies, workstations, and control systems. The M39003/09-2040H has a high temperature and temperature coefficient rating with an operating temperature range from -55°C to +125°C, and a maximum temperature coefficient of ±15%. It also features an excellent rated capacitance range between 30pF to 220uF, and a rated voltage of 6.3V to 35V. It is also designed with low leakage current, high ripple current, and high ripple voltage capability. Tantalum capacitors, such as M39003/09-2040H, are based on a wet tantalum process. The capacitors are manufactured in three main steps: a) powdering of the tantalum powder, b) pressing and sintering, and c) anode process. In the first step, the tantalum powder is mixed with a dielectric material, such as barium titanate or aluminum nitride, and heated to create a slurry. In the second step, the slurry is then pressed into the desired shape, and sintered at high temperature. In the third and final step, the surface of the anode is then oxidized and a layer of tantalum pentoxide is formed. The M39003/09-2040H uses a Wet Tantalum technology for its construction. In the Wet Tantalum process, the component is formed by using a mixture of tantalum and dielectric particles. This mixture is then pressed into a form and sintered (compacted and heated in a furnace) at high temperature. The result is a porous component with high power density and excellent thermal characteristics. The component is then treated with an electrolytic slurry, which oxidizes the anode and creates an oxide layer on the surface of the anode. This oxide layer acts as a dielectric, and is responsible for the capacitance of the component.Tantalum capacitors, such as the M39003/09-2040H, offer various benefits when compared to other types of capacitors. The Wet Tantalum process allows for the creation of highly reliable components with excellent high temperature stability, low ESR, and high capacitance ratings. They also offer increased robustness, electrical stability, and a highly repeatable performance with minimal change over time.Tantalum capacitors, such as the M39003/09-2040H, are ideal for military grade applications due to their high reliability and long-term stability. Furthermore, their small size and low cost makes them a competitive choice for applications that require high reliability and stable performance over extended periods of time.

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