M58LR256KT70ZC5E

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Memory technologies are an important part of modern computing. Nowadays, the most common type of memory used in computers and other electronic devices is DRAM (Dynamic Random Access Memory). DRAM allows for faster read and write speeds, higher bandwidth, and lower power consumption. In order for a device to operate reliably and be able to store and access data quickly, it needs to have memory components such as DRAM.M58LR256KT70ZC5E is one of such DRAM components and has specific application areas and working principles. It is a 256 Mb SDRAM that is used in a variety of embedded applications, such as medical and industrial instruments, point-of-sale terminals, and digital cameras. M58LR256KT70ZC5E has a number of features that make it an ideal choice for these applications.The most important feature of M58LR256KT70ZC5E is its high data transfer rate. It has a maximum data rate of 200 MHz and a maximum operating frequency of 167 MHz. This allows for faster read and write speeds, making it ideal for applications that require high performance. Additionally, it also has high endurance, with a maximum rating of over 1 million cycles. This makes it a good choice for embedded, long-term applications.Another important feature of M58LR256KT70ZC5E is its power efficiency. It requires 1.8V input and has an active power consumption of 5W, making it an ideal choice for applications where power consumption needs to be low. Additionally, it also has low power refresh capabilities, which allow it to operate more efficiently and conserve power.M58LR256KT70ZC5E also has a number of other features that make it an ideal choice for embedded applications. It is low-voltage-compatible, has on-chip error detection, supports multiple banks and multiple modes, and has a low-power active to pre-charge transition time. In terms of working principle, M58LR256KT70ZC5E is a synchronous DRAM (SDRAM) with a 64m x 16bit and 8-bank configuration. It has a single RAS line and four CAS lines. When accessing data from the DRAM, the RAS line must first be activated, followed by activation of the CAS line before the data can be read. As the data is read from the DRAM, the RAS and CAS lines must remain active for the duration of the read cycle. The data will then be stored in the system’s cache and be available for use. When writing data to the DRAM, the same process applies. The RAS and CAS lines must first be activated, and then the data is written to the DRAM. The data will then be stored in the system’s cache and be available for use.Overall, M58LR256KT70ZC5E is an excellent choice for embedded applications that require high throughput and low power consumption. Its features make it ideal for a variety of embedded applications, such as medical and industrial instruments, POS terminals, and digital cameras. Additionally, its working principle is straightforward and easy to understand, making it an ideal choice for embedded design engineers.

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