Allicdata Part #: | M93S56-WBN6P-ND |
Manufacturer Part#: |
M93S56-WBN6P |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC EEPROM 2K SPI 2MHZ 8DIP |
More Detail: | EEPROM Memory IC 2Kb (128 x 16) SPI 2MHz 8-PDIP |
DataSheet: | M93S56-WBN6P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Kb (128 x 16) |
Clock Frequency: | 2MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
Base Part Number: | M93S56 |
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The M93S56-WBN6P is an example of a memory device used in modern digital systems. It is a highly integrated 8-bit nonvolatile memory device and is used in a variety of applications from automotive to consumer, industrial and medical applications. It stores and retrieves data quickly and reliably and is an excellent choice for many applications.
The M93S56-WBN6P memory device is based on an 8-bit single-level cell (SLC) NAND Flash memory, which allows for a high degree of data storage density. The device has a high endurance rating of 1 million write/erase cycles, making it suitable for applications which require frequent data overwrites, such as in the automotive and industrial sectors.
The M93S56-WBN6P memory device uses a non-volatile technology called EEPROM, or electrically erasable programmable read-only memory. This technology is used to store data or programs reliably in a non-volatile memory device. The device comprises a memory array divided into number of memory cells, each of which stores one bit of data. The device is programmed by placing a voltage across these memory cells and activating program circuitry, causing the cells to release electrons from the gate oxide layer. The electrons become trapped in the cells, forming a kind of charge which is held until the cell is erased. This device can be erased using a combination of voltage, temperature and time.
In order to access the data stored in the memory device, a process called a read operation is performed. This requires the device to be continuously selected and deselected in order to read the data from the cells. When a cell is selected, its contents are read as a logical 0 or 1. The data is then stored in a register, before being sent to the output of the memory device.
The M93S56-WBN6P memory device is ideal for use in embedded applications due to its small size and low power consumption. The device is easy to program and the data stored in the memory device is accessed quickly and reliably. The device also supports pre-programming, which allows it to be pre-programmed with data before it is shipped to customers.
Due to its superior performance, the M93S56-WBN6P is an excellent choice for a variety of applications such as in automotive, consumer, industrial, and medical applications. The device is versatile and easy to program, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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