M95080-DFMC6TG Allicdata Electronics

M95080-DFMC6TG Integrated Circuits (ICs)

Allicdata Part #:

497-14916-2-ND

Manufacturer Part#:

M95080-DFMC6TG

Price: $ 0.18
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EEPROM 8K SPI 20MHZ 8UFDFPN
More Detail: EEPROM Memory IC 8Kb (1K x 8) SPI 20MHz 8-UFDFPN ...
DataSheet: M95080-DFMC6TG datasheetM95080-DFMC6TG Datasheet/PDF
Quantity: 1000
5000 +: $ 0.16383
10000 +: $ 0.16209
15000 +: $ 0.16099
25000 +: $ 0.15717
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UFDFPN (2x3)
Description

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M95080-DFMC6TG Memory Application Field and Working Principle

M95080-DFMC6TG is a type of serial EEPROM memory, which is produced by STMicroelectronics. This memory is based on the M95080, or 128-bit one-time programmable (OTP) EEPROMs, and is targeted for use in embedded applications requiring high reliability and low power consumption.

Application Fields

The M95080-DFMC6TG memory is most commonly used in the following applications:

  • Automotive systems
  • Industrial systems
  • Consumer electronics
  • Medical devices
  • Data acquisition

The M95080-DFMC6TG memory is also suitable for a wide range of embedded applications such as intelligent systems, data storage and communications engineering. This type of memory is especially suitable for applications where small size, low power, and high-reliability are essential.

Working Principle

The working principle of the M95080-DFMC6TG memory is based on memories that can be programmed only once and remain unchanged during subsequent operations. The memory is organized in 128 bits and consists of a single row of 128 cells, each storing a bit. This memory is programmed by applying a voltage of 12V for the programming current to each cell in the memory.

The programming process starts from the highest address and proceeds until the last address. A special termination algorithm is used to ensure that each cell is properly programmed. During the programming process, the memory maintains a write protection algorithm to prevent the memory contents from being corrupted by accidental power glitches.

Once the content is programmed, it is retained permanently unless it is subjected to erase operations. This memory supports \'erase window\' and \'erase all\' operations, both of which can be used to erase the entire memory. The erase window operation can be used to erase only the cells within a selected range of addresses, while the erase all operation can erase the entire memory.

This memory also supports an address write protection algorithm, which can be used to lock the contents of certain cells in the memory. This ensures that the contents of the specified cells cannot be changed without unlocking them. Furthermore, this memory supports low-power CMOS-type technology for low-power operation and high-reliability data retention.

Conclusion

The M95080-DFMC6TG memory is a serial EEPROM memory, which is suitable for embedded applications requiring high reliability and low power consumption. It is organized into a single row of 128 cells, and each cell can be programmed only once. This memory also supports \'erase window\' and \'erase all\' operations to erase the entire memory. Furthermore, it supports an address write protection algorithm to lock the contents of certain cells in the memory. This ensures that the contents of the specified cells cannot be changed without unlocking them.

The specific data is subject to PDF, and the above content is for reference

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