Allicdata Part #: | 1465-1050-ND |
Manufacturer Part#: |
MA4SW210B-1 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | DIODE SWITCH HMIC CHIP SPDT |
More Detail: | RF Switch IC General Purpose SPDT 18GHz Die |
DataSheet: | MA4SW210B-1 Datasheet/PDF |
Quantity: | 1000 |
Test Frequency: | 18GHz |
Supplier Device Package: | Die |
Package / Case: | Die |
Operating Temperature: | -65°C ~ 125°C |
Voltage - Supply: | -- |
Impedance: | -- |
Features: | -- |
IIP3: | -- |
P1dB: | -- |
Series: | HMIC™ |
Insertion Loss: | 1.2dB |
Isolation: | 40dB |
Frequency Range: | 2GHz ~ 18GHz |
Circuit: | SPDT |
Topology: | Reflective |
RF Type: | General Purpose |
Part Status: | Active |
Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MA4SW210B-1 RF Switches is a single-pole double-throw (SPDT) low insertion loss switch designed for applications in cellular phones, GSM or CDMA for isolating antennas within the same band or switching between antenna of different bands. This device has excellent insertion loss, high isolation and IP3 performance over the frequency range of 800MHz to 6GHz. With low control voltage, this SPDT RF switch can work reliably and effectively.
The MA4SW210B-1 RF switch has enhanced thermal stability for reliable operation over a wide temperature range. It is available in a compact, low-profile QFN package for high-performance and easy integration into board assemblies. This single-pole double-throw (SPDT) RF switch reduces power consumption to be suitable for portable electronic devices with a variety of battery sources.
The MA4SW210B-1 RF switches have a power handling capability of up to 1.5 Watts. The RF switches are designed to operate within a wide voltage range of 3V to 5V and feature a low voltage control capability. This low voltage control is achieved through the use of a voltage-controlled oscillator (VCO) that allows the RF switch to be tuned to the desired frequency. The switch provides excellent isolation with a return loss of more than -20dB over the entire frequency range.
The working principle of MA4SW210B-1 RF switches is based on an electromechanical design which uses an armature to drive a single pole from an attract and release position. This armature control switch is designed to operate between a voltage-controlled oscillator (VCO) and a resonant circuit. The resonant circuit is set up to match the frequency of the desired signal and the VCO is tuned to that frequency.
When the RF switch is activated, the voltage-controlled oscillator is tuned to the desired frequency and the armature is attracted to the resonant circuit. This will create an on-state in the switch. When the switch is deactivated, the voltage-controlled oscillator will be de-tuned and the armature will be released and the circuit will be opened. This will create an off-state in the switch.
The MA4SW210B-1 RF switch has a wide range of applications and is suitable for use in mobile phones, radio networks, and other electronic devices. It offers fast switching, low insertion loss, high isolation, and low power consumption for superior performance. With its enhanced thermal stability, low voltage control, and compact, low profile QFN package, the MA4SW210B-1 RF Switch is an ideal choice for wireless applications.
The specific data is subject to PDF, and the above content is for reference
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