Allicdata Part #: | 1465-1775-2-ND |
Manufacturer Part#: |
MADS-011010-14150T |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | DIODE SCHOTTKY 6-TDFN |
More Detail: | RF Diode Schottky - 1 Pair Common Cathode 6-TDF... |
DataSheet: | MADS-011010-14150T Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.61236 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky - 1 Pair Common Cathode |
Voltage - Peak Reverse (Max): | -- |
Capacitance @ Vr, F: | -- |
Resistance @ If, F: | -- |
Operating Temperature: | 175°C (TJ) |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-TDFN (1.5x1.2) |
Description
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MADS-011010-14150T Application Field and Working Principle
Diodes are semiconductor devices with two terminals. RF diodes are responsible for the generation, reception, and modulation of electrical signals in high-frequency circuitry. The MADS-011010-14150T diode is a zero-biased Schottky diode that is often used in applications that require high-frequency switching times. This article will explore the application fields and working principle of the MADS-011010-14150T.Application Fields of the MADS-011010-14150T
The MADS-011010-14150T is a zero-biased Schottky diode that is particularly well-suited for applications that require high speed switching. One of the primary application fields for this diode is in the field of communications technology. The MADS-011010-14150T can be used to generate signals for the transmission of data over coaxial or twisted-pair cables. Additionally, the MADS-011010-14150T can be used as a switch in digital circuits or to limit the power of signal amplifiers. The MADS-011010-14150T is also used as an avalanche diode in medical imaging applications, such as X-ray and CT scans.Working Principle of the MADS-011010-14150T
The MADS-011010-14150T is a zero-biased Schottky diode. As such, it is composed of two layers of semiconductor material. The first layer is the n-type material, which contains a surplus of electrons. The second layer is the p-type material, which has a deficit of electrons. These two layers are joined together, forming a "junction". A potential difference is applied between the two layers, causing electric current to flow through the diode when the potential difference is greater than a certain threshold voltage.When the potential difference reaches a certain threshold voltage, the electrons from the n-type material cross the junction and fill the holes in the p-type material, forming a layer of charge that allows current to flow. This is known as the forward bias, and it is how the MADS-011010-14150T enables current to flow when a potential difference is applied. In the reverse bias, the electric current flows in the opposite direction and the diode acts as a short circuit.The MADS-011010-14150T also has a low recovery time and low junction capacitance, making it ideal for high-frequency applications. Additionally, the low voltage drop of the MADS-011010-14150T diode makes it well-suited for applications where low power consumption is important.Conclusion
The MADS-011010-14150T is a zero-biased Schottky diode that is used in various applications such as communications, digital circuits, and medical imaging. Its low voltage drop and low recovery time make it well-suited for applications that require high-frequency switching times. Furthermore, it has a low junction capacitance, making it ideal for use in low power consumption applications. This article has explored the application fields and working principle of the MADS-011010-14150T.The specific data is subject to PDF, and the above content is for reference
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