MAPLAD18KP8.5AE3 Allicdata Electronics
Allicdata Part #:

MAPLAD18KP8.5AE3-ND

Manufacturer Part#:

MAPLAD18KP8.5AE3

Price: $ 27.46
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 85V 137V PLAD
More Detail: N/A
DataSheet: MAPLAD18KP8.5AE3 datasheetMAPLAD18KP8.5AE3 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
100 +: $ 24.96500
Stock 1000Can Ship Immediately
$ 27.46
Specifications
Current - Peak Pulse (10/1000µs): 132A
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 18000W (18kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 94.4V
Voltage - Reverse Standoff (Typ): 85V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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Surge items are needed in all sorts of applications, such as motors, power supplies, AC/DC converters, switches, drives and lighting systems to protect against transients and destructive high power spikes. TVS diodes, commonly known as transient voltage surge suppressors (TVSS), are typically installed in a parallel circuit to protect the rest of the circuit in the event of a surge. MAplad18KP8.5AE3 is a specific model of TVS diode from a large family of low-capacitance ESD protection device.

TVS diodes are widely used in system protection due to their ability to absorb transient voltage, or voltage spikes, that can damage electronics in a sub-nanosecond time frame. In this way, a TVS diode can absorb the energy of the voltage spike and help protect the device. The MAplad18KP8.5AE3 are offered as a low-capacitance (0.5pF), low-voltage ESD protection device. It is designed to protect against overvoltages as low as 8 volts and to also help protect against overcurrents.

The MAplad18KP8.5AE3 consists of a semiconductor diode composed of alternating P and N-type semiconducting layers. The P-type layers are made of a polysilicon material, while the N-type layers are made of oxynitride. This construction allows the diode to absorb the energy of a voltage spike and then quickly recover to its original state. The diode can be used to protect against high voltage transients, ESD, EFT, surge and power fault transients.

The MAplad18KP8.5AE3 is an excellent choice for applications such as consumer electronics, industrial electronics, automotive, and telecom/datacom. As a low-capacitance device, it offers excellent ESD protection while maintaining signal integrity. The MAplad18KP8.5AE3 is also able to provide excellent surge protection up to 18 kilo-amp peak surge current, which is more than double that of most standard TVS devices. It is also available in surface mount packages.

The working principle of MAplad18KP8.5AE3 is based on its ability to absorb the energy of a voltage spike and quickly recover to its original state. When a surge occurs, the diode rapidly depletes the electric field that it generates during the surge. This depletion of the electric field allows the current to pass through the diode, thus preventing damage to the equipment. The device can also be designed to limit the peak surge current, thus providing over-current protection for the sensitive electrical components.

In conclusion, the MAplad18KP8.5AE3 is an excellent choice for applications such as consumer electronics, industrial electronics, automotive, and telecom/datacom, where protection from transient voltages and high peak surge currents are needed. The diode offers excellent ESD protection while maintaining signal integrity, and can provide surge protection up to 18 kilo-amp peak surge current. The device is also available in surface mount packages, making it easy to install and use.

The specific data is subject to PDF, and the above content is for reference

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