Allicdata Part #: | MAPLAD36KP200AE3-ND |
Manufacturer Part#: |
MAPLAD36KP200AE3 |
Price: | $ 35.29 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 200V 322V PLAD |
More Detail: | N/A |
DataSheet: | MAPLAD36KP200AE3 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
100 +: | $ 32.08650 |
Current - Peak Pulse (10/1000µs): | 112A |
Supplier Device Package: | PLAD |
Package / Case: | Nonstandard SMD |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 36000W (36kW) |
Series: | Military, MIL-PRF-19500 |
Voltage - Clamping (Max) @ Ipp: | 322V |
Voltage - Breakdown (Min): | 222V |
Voltage - Reverse Standoff (Typ): | 200V |
Unidirectional Channels: | 1 |
Type: | Zener |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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Transient Voltage Suppressors (TVS) also commonly known as Transient Voltage Surge Suppressors, are an important component in high-energy protection. A wide variety of design types are available, including two different technologies; TVS diodes and MOVs (Metal Oxide Varistors). MAPLAD36KP200AE3 is one of the TVS diode types for commercial use.
An application field of MAPLAD36KP200AE3 is surged voltage protection. This component is typically used to suppress electromagnetic interference (EMI) spikes and to protect a circuit that is sensitive to surges or spikes (e.g., stop malfunctions caused by lightning strikes or power surges, protect from overvoltage problems, protect from overcurrent problems). Generally speaking, it is suitable for high-speed data communication and local area networks and great for current mode applications.
In order to understand further, this section looks at the MAPLAD36KP200AE3\'s working "principle" in more detail. MAPLAD36KP200AE3 is a uni-directional device. From the outside in, the MAPLAD36KP200AE3 consists of the following layers: (1) Anode - the positive terminal of the device; (2) Cathode - the negative terminal of the device; (3) N- doping layer - made up of N-type materials - this layer will block reverse current flow; (4) Neutral region - made up of non-conductive semiconductor materials; (5) P-doping layer - made up of P-type materials - this layer will provide a conducting path for forward current.
When the diode is in the clear condition with no current surge, it can operate under normal individual specifications. The diode will be in this condition until it reaches a threshold current; this is the point at which the diode will begin to be affected by the surge. At this point, a reverse voltage will be applied, adding an extra voltage to the diode. This causes a rapid heart rate increase and high power consumption. The avalanche breakdown process is then initiated, generating high-current spikes.
The MAPLAD36KP200AE3 is designed to absorb the surge energy produced from an overvoltage transient. When this happens, an increased current begins to flow through the reverse-biased p-n junction. This causes the avalanche breakdown process to begin and make the current flow in the opposite direction. This process will be the one that will be controlling the flow of energy and will eventually dissipate most of the incoming surge energy.
Once the voltage transient event ends, the MAPLAD36KP200AE3 will quickly return to its normal operating conditions. This is because the avalanche breakdown phenomenon created by the surge will be completely reversed. The diode will now be back in its reverse-biased state and will be ready to respond to any future surge events.
The main advantages of this type of diode are that it has a fast response time, is cost-effective, and provides a wide range of protection levels. MAPLAD36KP200AE3 is also highly reliable and can be used in both low- energy and high-energy applications. The only disadvantage is that they have a limited voltage protection range, with maximum ratings of 36V and peak power dissipation of 400W.
In conclusion, MAPLAD36KP200AE3 is a versatile TVS diode, suitable for a variety of applications such as surge voltage protection, providing high-energy protection against overvoltage transients. This component is cost-effective, providing a wide range of protection levels and fast response times. Thanks to its reliable performance, MAPLAD36KP200AE3 is suitable for both low-energy and high-energy applications.
The specific data is subject to PDF, and the above content is for reference
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