MASW-002103-13630G

Series:	HMIC™
Packaging:	Tray
Part Status:	Active
RF Type:	General Purpose
Topology:	Reflective
Circuit:	SPDT
Frequency Range:	50MHz ~ 20GHz
Isolation:	27dB
Insertion Loss:	1.05dB
Test Frequency:	20GHz
P1dB:	--
IIP3:	66dBm
Features:	--
Impedance:	50 Ohm
Voltage - Supply:	--
Operating Temperature:	-65°C ~ 125°C
Package / Case:	--
Supplier Device Package:	--

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

RF Switches-
MASW-002103-13630G application field and working principle

RF switches (also known as radio-frequency switches) are electronic components used in the construction of radio-frequency circuits. They are employed in a wide array of analog and digital circuits. RF switches serve a variety of applications from simple RF signal switching to implementation of complex switching networks. They are highly integrated, wide-band, microwave switching components that perform multiple functions in a wide variety of RF conditioning and control functions.

The MASW-002103-13630G is a single-pole, double throw RF switch with an operating frequency range from DC to 3 GHz. It features an insertion loss of 0.9 dB, and isolation of 30 dB at 0.9 GHz, with a typical rise and fall time of 0.6 μs. It is a high-performance switching device with fast switching speed and good thermal stability. The MASW-002103-13630G is suitable for high speed switching applications in RF circuit designs, such as digital logic switching, antenna switching, RF multiplexer, and many other types of applications.

The operating principle of the MASW-002103-13630G is based on a PIN diode control circuit. When a sufficient level of DC current is applied to the control line, the diode is brought into a low R value that results in high impedance at the RF port. This low impedance is used to cut off the signal from the source to the load. When the control current is removed, the PIN diode is brought back to a high R value, which cancels out the high impedance of the diode, allowing the signal to reach the load. The isolation between RF ports is achieved using the same principle. This enables the MASW-002103-13630G to be used as a high performance RF switch.

The MASW-002103-13630G can be used in a wide range of applications such as military, aerospace, ground mobile communications, cellular base stations, automotive systems, medical equipment, instrumentation, and consumer products. It is ideal for applications that require high speed operation and high reliability. It is a cost-effective solution for high performance RF switching.
The MASW-002103-13630G is also easy to integrate into systems with its compact16 pin TSSOP package and single supply voltage of +5V. The device also features low insertion losses, low off-state losses, and wide bandwidths.
In conclusion, the MASW-002103-13630G is an ideal RF switch for a wide range of applications. Its high linearity ensures performance is maintained even at frequencies up to 3 GHz. The device is cost-effective, highly integrated, and offers superior RF transmission performance. It is the ideal solution for those applications that require fast switching speed and high reliability.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description