MASW-002103-13635P Allicdata Electronics

MASW-002103-13635P RF/IF and RFID

Allicdata Part #:

1465-1760-2-ND

Manufacturer Part#:

MASW-002103-13635P

Price: $ 8.41
Product Category:

RF/IF and RFID

Manufacturer: M/A-Com Technology Solutions
Short Description: DIODE,PIN,SMT2T
More Detail: RF Switch IC SPDT 20GHz 50 Ohm
DataSheet: MASW-002103-13635P datasheetMASW-002103-13635P Datasheet/PDF
Quantity: 1000
500 +: $ 7.64603
Stock 1000Can Ship Immediately
$ 8.41
Specifications
Test Frequency: 20GHz
Supplier Device Package: --
Package / Case: Module
Operating Temperature: -65°C ~ 125°C
Voltage - Supply: --
Impedance: 50 Ohm
Features: --
IIP3: 66dBm
P1dB: --
Series: --
Insertion Loss: 1.05dB
Isolation: 27dB
Frequency Range: 50MHz ~ 20GHz
Circuit: SPDT
Topology: --
RF Type: --
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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RF Switches

MASW-002103-13635P application field and working principle

The MASW-002103-13635P is a radio frequency (RF) switch, which is a current-controlled semiconductor device used to switch signals or power in different routing paths. It is typically used to forward RF input/output ports in selected components or systems, enabling mobile phones to route radio frequency signals as easily as a computer routes electrical signals. It also has wide application in device and system-level optimization.

There are three categories of RF Switches: PIN-diode switches, FET switches, and MEMS switches. PIN-diode switches are the most common RF switches. They are more cost-effective than FET switches, but are limited in frequency range, operating power, insertion loss, and switching speed. FET RF switches, such as the MASW-002103-13635P, have higher performance capabilities over PIN-diode switches but require more control circuitry and pathways along with higher power consumption. Finally, MEMS switches are usually center frequency optimizable, and have the advantages of small size and low power. However, they tend to be expensive and have limited frequency range.

The MASW-002103-13635P is a FET RF switch with high frequency range of up to 3GHz, low insertion loss and high isolation, good linearity and flatness, low control voltages, fast switching speed, and low power consumption. Its working principle is based on Faraday’s law of electromagnetic induction: when a current passes through a conductor, a magnetic field is generated around it, which in turn causes an electric field. By controlling the amount of current, the magnetic field and electric field can be adjusted, and this then enables the switch to change from an “OFF” state to an “ON” state.

This makes the MASW-002103-13635P a suitable choice for use in high frequency systems, such as cellular base stations and test systems, satellite communications, military communication systems, radar systems as well as automotive and industrial systems. Due to its superior performance, the MASW-002103-13635P has the capability to switch quickly and accurately without causing interference or compromising the signal integrity.

The specific data is subject to PDF, and the above content is for reference

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