Allicdata Part #: | MB89485LAPFM-G-190-CNE1-ND |
Manufacturer Part#: |
MB89485LAPFM-G-190-CNE1 |
Price: | $ 0.00 |
Product Category: | Uncategorized |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC ANALOG |
More Detail: | N/A |
DataSheet: | MB89485LAPFM-G-190-CNE1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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The MB89485LAPFM-G-190-CNE1 is a product from the Japanese semiconductor manufacturer Matsushita Electric Industrial Co., Ltd. It is a high speed multi-purpose forward-biased lateral field effect transistor (FET). The application field for the device is varied, including logic gate operations, analog circuitry, and high frequency switching.
The device has basic characteristics common to other FETs, such as a gate current and a breakdown voltage value. The gate current is low, allowing a higher switching speed than ordinary FETs. With its low gate current, it is well-suited for logic gate operations. The breakdown voltage is high, making it suitable for applications requiring a high breakdown voltage.
The MB89485LAPFM-G-190-CNE1 also has a few unique characteristics that make it stand out from other FETs. It has an improved bipolar voltage drive capacity over conventional FETs, more reliable performance, and a high current blocking capability.
The device’s unique structure helps make it an integrated device. The gate electrode is constructed of an insulated gate layer and a counter base electrode. The latter allows for direct-drive control voltage without an emitter follower configuration, making the structure simpler and more reliable. The integrated structure also helps reduce power consumption.
The device works on the principle of carrier injection. In operation, a voltage is applied to the gate to inject electrons into the channel region between the source and drain. This forms an inversion layer, allowing current flow. The application of an appropriate gate voltage produces current due to the presence of the inversion layer. As the gate current increases, the drain current increases as well.
The switch’s performance is further improved by the presence of efficient control and isolation of the source and drain regions. This helps reduce the switching time and thus reduces power consumption. As the device has low gate current, its power consumption is reduced as well.
The MB89485LAPFM-G-190-CNE1 can be used in a variety of analog circuits, including radio frequency amplification and switching. It is also suitable for a wide range of logic applications. This combined with its low power consumption and high current blocking make it an attractive option for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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