Allicdata Part #: | MBRF12080R-ND |
Manufacturer Part#: |
MBRF12080R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE SCHOTTKY 80V 60A TO244AB |
More Detail: | Diode Array 1 Pair Common Anode Schottky 80V 60A C... |
DataSheet: | MBRF12080R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Anode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 80V |
Current - Average Rectified (Io) (per Diode): | 60A |
Voltage - Forward (Vf) (Max) @ If: | 840mV @ 60A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 80V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | TO-244AB |
Supplier Device Package: | TO-244AB |
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The MBRF12080R is an array of eight discrete Common Anode Schottky Rectifiers manufactured by ON Semiconductor. It is designed to provide a high reverse voltage blocking, low forward voltage drop, and low leakage current. This device is ideal for use in switched mode power supplies, pulse generator output stages, and as protection devices in high frequency circuits. It is also suitable for general purpose rectification applications.
The MBRF12080R uses its eight individual Schottky diodes to provide a high reverse voltage blocking capability. The combination of low forward voltage drop (generally less than 0.7V) and low reverse leakage current (usually less than 10A) makes it suitable for use in smaller power supplies and allows it to be used in high frequency applications like switching regulators without the need for external components. It is also capable of handling inrush currents due to its very low capacitance.
The MBRF12080R is composed of two parallel-connected four-diode arrays, two for the positive terminal and two for the negative terminal. Each diode in the array has its own cathode, but all four cathodes are ultimately connected to the same terminal. This configuration allows current to flow when a positive or negative voltage is applied to the anode. When the voltage reaches the diode\'s breakover voltage (typically 0.7V), the junction begins to conduct. As the current flows, it is passed through a channel formed by the Schottky barrier. This barrier keeps the junction from overheating, allowing the diode to efficiently carry a high current with low loss.
The MBRF12080R is also designed to provide ESD protection. This is accomplished by a series chain of interconnected diodes that allows a high impedance path to be established between the input and output. This helps to protect the device and its connected components from any transient pulses that might occur. The device is also able to withstand high operating temperatures, making it suitable for use in a wide range of applications.
In summary, the MBRF12080R is an excellent choice for a range of applications, from switched mode power supplies to ESD protection. Its combination of low forward voltage drop, low reverse leakage current, and very low capacitance make it an ideal choice for high frequency circuits and inrush current protection.
The specific data is subject to PDF, and the above content is for reference
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