MBRF20035R Allicdata Electronics
Allicdata Part #:

MBRF20035R-ND

Manufacturer Part#:

MBRF20035R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: GeneSiC Semiconductor
Short Description: DIODE SCHOTTKY 35V 100A TO244AB
More Detail: Diode Array 1 Pair Common Anode Schottky 35V 100A ...
DataSheet: MBRF20035R datasheetMBRF20035R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Configuration: 1 Pair Common Anode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 100A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 1mA @ 35V
Operating Temperature - Junction: -55°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: TO-244AB
Supplier Device Package: TO-244AB
Description

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Diodes are often classified as Rectifiers, which are devices that are used to convert alternating current into direct current by only allowing the current to flow in one direction. The MBRF20035R is one such Rectifier, and is a part of the family of Metal Oxide Semiconductor Field Effect Transistors, MOSFETs. In this article, we will discuss the application field and working principles of this particular device.

Application Field of the MBRF20035R

The MBRF20035R is a surface-mount device that is generally used in high-power DC/DC converters. This device has a low threshold gate voltage and a high current capacity. It can also be used in portable devices and in telecommunication systems. Additionally, it is also suitable for various AC/DC applications, including switch mode power supplies, laptops, tablets, and LCD TV sets.

Working Principle of the MBRF20035R

The MBRF20035R is a MOSFET with silicon oxide layers between the gate terminal and the P-type substrate. A positive voltage is applied to the gate terminal, which creates an electric field between the gate and the P-type substrate. This electric field attracts electrons from the N-type material in the source and drain regions, creating a “channel” between the source and the drain. This channel allows current of an electrical signal to flow when the gate voltage is high enough. However, when the gate voltage drops, the channel is “pinched off”, thus blocking the flow of current in either direction.

The MBRF20035R is able to withstand higher currents and higher voltages than traditional MOSFETs due to its construction. The MOSFET uses an Oxide-Nitride-Oxide-Nitride structure, which is a combination of two Oxide nitride layers. The Oxide layers act as an insulator, while the Nitride layers act as a buffer between the Oxide layers, allowing for higher current and voltage operation. This structure also enables the device to operate at higher temperatures than traditional MOSFETs.

The MBRF20035R is available in a variety of package sizes, and is suitable for applications where space is of the utmost concern. Additionally, the device does not require a heat sink, which makes it suitable for applications with tight packaging constraints. Finally, the device is RoHS compliant and can be used with a wide variety of circuit protection components.

Conclusion

The MBRF20035R is a MOSFET that is designed to meet higher current and voltage requirements. It has a low threshold gate voltage and a high current capacity, making it suitable for portable devices and various AC/DC applications. Additionally, the device does not need a heat sink, and is available in a variety of package sizes. In conclusion, the MBRF20035R is a great choice for any application requiring a high-power DC/DC converter or other AC/DC applications.

The specific data is subject to PDF, and the above content is for reference

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