Allicdata Part #: | MBRF500100R-ND |
Manufacturer Part#: |
MBRF500100R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE SCHOTTKY 100V 250A TO244AB |
More Detail: | Diode Array 1 Pair Common Anode Schottky 100V 250A... |
DataSheet: | MBRF500100R Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Anode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io) (per Diode): | 250A |
Voltage - Forward (Vf) (Max) @ If: | 840mV @ 250A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 100V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | TO-244AB |
Supplier Device Package: | TO-244AB |
Description
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MBRF500100R diodes are part of a special type of diode array that falls into the Rectifiers - Arrays category. These diodes are used for both rectification and switching functions and offer two major benefits over conventional diodes: low forward voltage drop and fast switching speed. The MBRF500100R diodes are designed specifically to work in applications where high power and efficient operation are important. They are suitable for use in a variety of applications, including automotive, telecommunications, medical and electrical/electronic equipment. The working principle of the MBRF500100R is quite simple. When a voltage is applied to the diode, it will cross a barrier called the PN junction. This barrier is created by the gap between the p-type semiconductor material and the n-type semiconductor material in the diode. This barrier will block the majority of electrons from passing through it, allowing only the minority charges to find their way. The blocked majority charge is referred to as the majority charge, while the minority charge is referred to as the majority current. As the voltage applied to the diode increases in amplitude, the majority charge will be forced to try to pass through the barrier, resulting in forward current. The MBRF500100R diodes are designed to be highly efficient, offering a low forward voltage drop, meaning that less energy is lost as heat and is instead converted into useful electrical power. This helps to reduce the overall power consumption of the circuit, reducing energy costs for the system. Additionally, the high switching speed of the diodes helps to prevent electrical interference, providing a stable working environment for electronics and electrical components. In terms of safety, the MBRF500100R diodes are designed to prevent an abnormal flow of electrons, preventing overloading and possible electric shock. This ensures that there is a controlled and safe flow of electricity, and that other devices, wires, appliances and connections in the circuit will not be damaged. Overall, the MBRF500100R diodes offer numerous benefits in terms of their performance and safety. They are suitable for a wide range of electronics applications and are an ideal choice for high power and efficiency.
The specific data is subject to PDF, and the above content is for reference
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