MBRF750 C0G

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	50V
Current - Average Rectified (Io):	7.5A
Voltage - Forward (Vf) (Max) @ If:	750mV @ 7.5A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	100µA @ 50V
Capacitance @ Vr, F:	--
Mounting Type:	Through Hole
Package / Case:	TO-220-2 Full Pack
Supplier Device Package:	ITO-220AC
Operating Temperature - Junction:	-55°C ~ 150°C

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Introduction

The MBRF750 C0G is a high-power and fast-switching rectifier diode that is widely used in automotive, industrial, and consumer applications. It is designed to provide excellent switching performance and low forward voltage drop. This rectifier diode is constructed of a Gallium Arsenide semiconductor material that has superior thermal, switching, and junction properties. The MBRF750 C0G is a high-efficiency rectifier that can provide up to 50A of forward current and 5A peak surge current. This diode has a reverse recovery time of 1nS, low reverse voltage leakage, and a temperature coefficient of -20±5 mV/ºC. It also offers low noise, fast switching times, and low power consumption.

Applications

The MBRF750 C0G is an ideal choice for a wide range of automotive, electrical, and communications applications. It is commonly used in DC-DC converters, inverters, and power supplies to provide smooth power switching. It can also be used in applications, where fast switching times and a wide voltage range are necessary, such as LED lighting systems, power line protection, and wireless communication systems. The diode is also used in the automotive industry for applications, such as controlling battery-operated devices, high-current switching, and motor speed control. It is also commonly used in industrial applications where it provides reliable, high-power switching performance.

Working Principle

The MBRF750 C0G is an efficient rectifier diode that operates on the principle of reversed-biased breakdown. This diode consists of three layers of semiconductor material with a positive P-type layer sandwiched between two negative N-type layers. When a positive voltage is applied to the anode and a negative voltage to the cathode, electrons from the N-type layers are drawn to the positively charged anode, creating a reverse-biased breakdown. Once the voltage reaches a certain point, the diode will begin to conduct electricity and a flow of current will pass through the N-type layers.The MBRF750 C0G has a low forward voltage of 1.5V and a reverse voltage of 100V. The diode is capable of dissipating up to 6W of power and can handle surge currents of up to 5A. The fast switching times make it ideal for applications where precise voltage regulation is required.

Conclusion

The MBRF750 C0G is a high-power and fast-switching rectifier diode that is used in a wide range of automotive, industrial, and consumer applications. It is designed to provide excellent switching performance and low forward voltage drop. The low forward voltage, reverse voltage leakage, and fast switching times make it an ideal choice for applications requiring precise voltage regulation and smooth power switching.

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