MBRF7H50-E3/45

Diodes - Rectifiers - Single

The MBRF7H50-E3/45 is a standard single body rectifier diode that is frequently used in low-frequency, low-amplitude applications. With a recovery time of less than 1 microsecond, it is one the fastest rectifiers available in the market. It is a rugged and robust device, which makes it ideal for use in extreme environmental settings.

Maximu m Reverse Voltage (VR)

The maximum reverse voltage (VR) that this diode can handle is 50V. This specification is the effectively the maximum reverse voltage (reverse bias) that can be applied to the diode’s P-N junction without breaking down the junction or causing excessive power dissipation.

Maximum Power Dissipation (PD)

The maximum power dissipation for the MBRF7H50-E3/45 is 1.0W. This is the largest amount of power the diode can safely dissipate. Exceeding the maximum power dissipation limit can cause the diode to overheat, resulting in permanent damage or failure of the diode.

Forward Voltage Drop (VF)

The forward voltage drop is the voltage difference between the anode and the cathode when the diode is forward biased. The MBRF7H50-E3/45 has a forward voltage drop of 1.1V. This is a lower-than-average forward voltage drop when compared to other rectifier diodes.

Breakdown Voltage (VRM)

The breakdown voltage is the voltage level at which the P-N junction starts to conduct in reverse (breakdown) direction. The MBRF7H50-E3/45 has a breakdown voltage of 68V. This is a higher-than-average breakdown voltage for a rectifier diode.

Maximum Allowable Repetitive Forward Voltage (VRRM)

The maximum allowable repetitive forward voltage (Vf) is the maximum forward voltage level that can be applied to the diode’s P-N junction without suffering from any damage or substantial loss of performance. The MBRF7H50-E3/45 has a maximum allowable repetitive forward voltage of 62V.

Average Rectified Forward Current (IF)

The average forward rectified current (IF) is the current level that the diode can safely handle when forward biased without suffering from excessive power dissipation or overheating. The MBRF7H50-E3/45 has an average rectified forward current of 7A.

Coefficient of Dynamic Resistance (rd)

The coefficient of dynamic resistance (rd) is the ratio of the change in forward voltage (VF) to the corresponding change in forward current (IF). The MBRF7H50-E3/45 has a coefficient of dynamic resistance of 0.13Ohms.

Application Field and Working Principle

The MBRF7H50-E3/45 is most commonly used to construct low-amplitude, low-frequency pulse rectifier circuits. When forward biased, this diode can conduct current in the anode-to-cathode direction with a low forward voltage (VF) drop of 1.1V. The typical breakdown voltage of the diode is 68V, which limits the reverse current (from the anode to cathode) to a safe level. This function allows the diode to limit the input voltage applied to the downstream circuitry, protecting it from possible damage. This diode is also used in applications such as signal processing, DC power supplies, AC power rectification, over-voltage protection, and signal modulation. Moreover, it is suitable for use in extreme environmental conditions like high temperatures, humidity and moisture.