MD51V65165E-50TAZ0AR Allicdata Electronics
Allicdata Part #:

MD51V65165E-50TAZ-ND

Manufacturer Part#:

MD51V65165E-50TAZ0AR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC DRAM 64M PARALLEL 50TSOP II
More Detail: DRAM Memory IC 64Mb (4M x 16) Parallel 25ns 50-TS...
DataSheet: MD51V65165E-50TAZ0AR datasheetMD51V65165E-50TAZ0AR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 64Mb (4M x 16)
Write Cycle Time - Word, Page: 84ns
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II
Base Part Number: MD51V65165E
Description

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Memory

The MD51V65165E-50TAZ0AR memory is a type of read/write memory specifically tailored for applications that need a fast but cost-effective alternative to dynamic random access memory (DRAM). It is mainly used by industrial and enterprise applications requiring high levels of scalability and reliability in order to comply with stringent requirements. In this article, we will look at the application field and working principle of the MD51V65165E-50TAZ0AR memory to give you a better understanding of this product.

Application Field

The MD51V65165E-50TAZ0AR memory works in a variety of applications that require high levels of scalability and reliability. This type of memory is particularly suitable for embedded systems that need to store large amounts of data for long periods of time without needing frequent refreshes. The MD51V65165E-50TAZ0AR is often used in applications like industrial automation systems, automotive components, and medical devices. The high speed of the memory makes it well-suited for applications that require precisely timing the access of data. For example, the MD51V65165E-50TAZ0AR memory is often used in robot controllers to allow the robot to accurately follow instructions and make timely decisions.

Working Principle

The MD51V65165E-50TAZ0AR memory is a type of non-volatile read/write memory. This means that the memory retains data even when the power is turned off. It stores the data in cells through an electrostatic discharge, which requires very little power. This allows the memory to provide fast read and write speeds while being extremely energy efficient. The memory operates in a static manner and is divided into pages of 64 bytes, which can be individually addressed. Data is transferred between the memory and the controller through a three-wire serial interface.

The MD51V65165E-50TAZ0AR memory also features a number of features to ensure reliability. It features a built-in error correction system, which can detect and correct single-bit errors. It is also capable of detecting page errors, which allows it to detect double-bit errors and make corrections. The memory also has a built-in write protection system to prevent data from being unintentionally overwritten.

Conclusion

The MD51V65165E-50TAZ0AR memory is a fast and efficient memory solution for applications that require high levels of scalability and reliability. It has a number of features built-in to ensure data integrity, and it requires very little power to operate. With its fast read and write speeds, it is ideal for industrial and enterprise applications.

The specific data is subject to PDF, and the above content is for reference

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