MDI550-12A4 Allicdata Electronics
Allicdata Part #:

MDI550-12A4-ND

Manufacturer Part#:

MDI550-12A4

Price: $ 101.75
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT BUCK 1200V 670A Y3-DCB
More Detail: IGBT Module NPT Single 1200V 670A 2750W Chassis Mo...
DataSheet: MDI550-12A4 datasheetMDI550-12A4 Datasheet/PDF
Quantity: 1000
2 +: $ 92.50010
Stock 1000Can Ship Immediately
$ 101.75
Specifications
Current - Collector Cutoff (Max): 21mA
Base Part Number: MDI
Supplier Device Package: Y3-DCB
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 26nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
Power - Max: 2750W
Current - Collector (Ic) (Max): 670A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Single
IGBT Type: NPT
Part Status: Active
Description

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The MDI550-12A4 is a family of integrated gate-bounded transistor (IGBT) modules. It includes a driver, a transistor and other components. As an IGBT module, the MDI550-12A4 has a variety of applications, including high frequency switching, low-voltage and medium-voltage motor control and power conversion. It is also used in high-performance motion control and uninterruptible power supply (UPS) systems.

The MDI550-12A4 module is a 1200 volt integrated gate-bounded transistor (IGBT), capable of achieving frequency switching speeds of up to 12 kHz. It is designed for high-power applications, capable of delivering up to 550kw of power. The module uses a diode-tied upper arm (DTUA) structure to achieve higher efficiency, higher power density, and better thermal performance.

The working principle of the MDI550-12A4 module is based on the principle of electric conduction. When an electric current is applied to the module, current flow is through the drain-source junction of the transistor by application of electric field. This creates a current of electron flow across the junction. The current flow can be controlled by changing the voltage applied across the junction. This voltage determines the amount of current flowing through the transistor; the more the voltage, the higher the current.

The MDI550-12A4 module includes a driver circuit to control the gate voltage of the transistor. The driver circuit is also responsible for providing over-voltage and over-current protection, which helps to reduce the risk of electrical shock or burnout when working with high-powered devices. The driver also helps to ensure proper current flow through the transistor, ensuring optimum performance and protection of the device.

The MDI550-12A4 module is designed to achieve high switching speeds and high efficiency levels. It is capable of providing up to 550kw of power, allowing applications such as high frequency switching, low-voltage and medium-voltage motor control, and power conversion. As an IGBT module, the MDI550-12A4 provides the power and reliability needed for high performance motion control and uninterruptible power supply (UPS) systems. With its advanced design and high power capability, it is an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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