
Allicdata Part #: | MDS500L-ND |
Manufacturer Part#: |
MDS500L |
Price: | $ 367.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 833W 24A 55ST1 |
More Detail: | RF Transistor NPN 70V 24A 1.03GHz ~ 1.09GHz 833W C... |
DataSheet: | ![]() |
Quantity: | 1000 |
25 +: | $ 333.96300 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 70V |
Frequency - Transition: | 1.03GHz ~ 1.09GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 9.2dB |
Power - Max: | 833W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 5V |
Current - Collector (Ic) (Max): | 24A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55ST |
Supplier Device Package: | 55ST |
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MDS500L is a type of radio frequency (RF) bipolar junction transistor. This transistor is specially designed for applications such as L-band amplifiers, low noise amplifiers, oscillators, and low-noise amplifiers for radar processes. The specific design of the MDS500L makes it highly suitable for RF applications that require low distortion and high gain.
The MDS500L is an NPN transistor, which means it is composed of an emitter, base, and collector. It is made using a high-grade Epitaxial Dielectric Isolation (EDI) technology, which allows for the device to achieve its high gain and low noise capabilities. The EDI technology also provides the device with good thermal properties and robustness against mechanical shock.
The transistor\'s main application is as an amplifier, which is used to amplify a signal at its input. The device exhibits high gain and a low noise figure, which makes it an ideal choice for many RF applications. The device has a maximum frequency of 700 MHz, which is well within the range of many modern communications systems.
In addition to being used as an amplifier, the MDS500L can also be used as an oscillator. Oscillators are used in many applications, such as radar and communication systems, to generate a steady and consistent frequency. The transistor can also be used as an attenuator, which is used to reduce the gain of a signal. Finally, the MDS500L can be used in negative feedback circuits, which can be used to stabilize the gain of an amplifier circuit.
The working principle of the MDS500L is fairly straightforward. When a voltage is applied across the emitter and collector, the current generated by the base-emitter junction will in turn cause a current to flow between the emitter and collector. This current flow is then amplified and sent to the output of the transistor. As the voltage increases, the current will also increase, thus increasing the gain of the MDS500L.
The MDS500L is an excellent choice for RF applications due to its low distortion, high gain, and low noise capabilities. The device can be used in a variety of applications where a low distortion, high gain, and low noise performance are required. The device is also backed by a reliable, robust design, making it a reliable choice for many applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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MDS500L | Microsemi Co... | 367.36 $ | 1000 | TRANS RF BIPO 833W 24A 55... |
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